SGS Thomson Microelectronics STB7NB40 Datasheet

N - CHANNEL ENHANCEMENT MODE

TYPE V

DSS

STB7NB40 400 V < 0.9 Ω 7.0 A

R

DS(on)

I

D

STB7NB40

PowerMESH MOSFET

PRELIMINARY DATA

■ TYPICALR

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHETESTED

■ VERYLOW INTRINSIC CAPACITANCES

■ GATECHARGEMINIMIZED

■ FOR THROUGH-HOLE VERSIONCONTACT

DS(on)

=0.75 Ω

SALESOFFICE

DESCRIPTION

Using the latest high voltage technology, SGS-Thomson
has designed an advanced family of power Mosfets with
outstanding performances. The new patent pending strip
layout coupled with the Company’s proprietary edge
termination structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.

APPLICATIONS

■ HIGH CURRENT, HIGHSPEEDSWITCHING

■ SWITCHMODEPOWER SUPPLIES(SMPS)

■ DC-ACCONVERTERS FOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTORDRIVE

ABSOLUTE MAXIMUM RATINGS

3

1

D2PAK
TO-263

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

Symb o l Para meter Value Uni t

STB7NB40

V

V

V

I

DM

P

dv/dt(

T

(•) Pulse width limitedby safe operating area (1)ISD≤ 7A, di/dt ≤ 200 A/µs, VDD≤ V

Drain-source Volt age (VGS=0) 400 V

DS

Drain- gate Voltage (RGS=20kΩ)

DGR

Gat e- source Vo lt age ± 30 V

GS

I

Drain C ur rent (contin uous) at Tc=25oC7A

D

I

Drain C ur rent (contin uous) at Tc=100oC4.4A

D

400 V

(•) Drain C ur rent (pulsed) 28 A

Tot al Dis sipation at Tc=25oC100W

tot

Derating Factor 0.8 W/

1) Peak Di ode Recovery v o lt age sl ope 4.5 V/ns

Sto rage Temperature -65 to 150

stg

T

Max. O perating Junction Te mperatur e 150

j

,Tj≤T

(BR)DSS

JMAX

o

C

o

C

o

C

October 1997

This ispreliminary informationon a new product now in development or undergoing evaluation. Details are subject to changewithout notice.

STB7NB40

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symbol Para met e r Max Va lue Uni t

I

AR

E

Ther mal Resis tance J unction-case Max 1.25
Ther mal Resis tance J unction-ambient Max

Ther mal Resis tance Cas e - si nk T yp
Maximum Lead Te mperatu re For Soldering Purpose

l

Avalanche C urr e nt , R ep et it i v e o r Not- Re petitive
(pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max, δ <1%)

j

62.5

0.5

300

7A

300 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

=250µAVGS=0

I

D

400 V

Breakdown V oltage

I

DSS

I

GSS

Zer o G at e Voltage
Drain Curre nt ( V

GS

Gat e-body Leaka ge
Current (V

DS

=0)

=0)

V

=MaxRating

DS

= Max Rating x 0.8 Tc= 125oC

V

DS

= ± 30 V

V

GS

1

50

± 100 nA

ON (∗)

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

V

GS(th )

Gate Threshold

V

DS=VGSID

=250µA

345V

Voltage

R

DS(on)

Stati c D rain-source On

VGS=10V ID= 3.5 A 0.75 0.9 Ω

Resistance

I

D(on)

On Stat e Dra in Curr e nt VDS>I

D(on)xRDS(on)max

7A

VGS=10V

DYNAMIC

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansconductance

C

C

C

Input Ca pac i t an c e

iss

Out put Capacitance

oss

Reverse T ransfer

rss

Capa cit an c e

VDS>I

D(on)xRDS(on)maxID

=3.5A 2.5 4.2 S

VDS=25V f=1MHz VGS= 0 705

132

17

720
175

25

µA
µA

pF
pF
pF

2/6