SGS Thomson Microelectronics STB7NA40 Datasheet
STB7NA40
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPICALR
DS(on)
= 0.82 Ω
± 30V GATE TOSOURCE VOLTAGE RATING
100% AVALANCHETESTED
REPETITIVEAVALANCHEDATAAT100
o
C
LOW INTRINSIC CAPACITANCES
GATECHARGE MINIMIZED
REDUCEDTHRESHOLD VOLTAGESPREAD
THROUGH-HOLEI2PAK (TO-262) POWER
PACKAGEIN TUBE(SUFFIX ”-1”)
SURFACE-MOUNTING D2PACK (TO-263)
POWERPACKAGEIN TUBE(NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCHMODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERSFOR WELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Val ue Uni t
V
DS
Drain-source Voltage (VGS= 0) 400 V
V
DGR
Drain- gate Voltage ( RGS=20kΩ) 400 V
V
GS
Gate-s ource Voltage ± 30 V
I
D
Drain Current (continuous) at Tc=25oC6.5A
I
D
Drain Current (continuous) at Tc=100oC4.1A
I
DM
(•) Drain Current (pulsed) 26 A
P
tot
Tot al Dissipat ion at Tc=25oC 100 W
Derat ing Fa ct or 0.8 W/
o
C
T
stg
Sto rage Tem perature -65 t o 15 0
o
C
T
j
Max. Operat ing Juncti on Temper at u r e 150
o
C
(•) Pulsewidth limitedby safe operating area
TYPE V
DSS
R
DS(on )
I
D
STB 7NA40 400 V < 1 Ω 6.5 A
October 1995
1
2
3
1
3
I2PAK
TO-262
D2PAK
TO-263
1/10
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Therm al Resistanc e Juncti on-c ase Max
Therm al Resistanc e Juncti on-am b ient Max
Therm al Resistanc e Case-sink Ty p
Maxim um Lead Tem p era t ure For So ldering Purpose
1.25
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symb ol Param et er Max V al ue Uni t
I
AR
Avalanc h e Current , Repet it ive or Not -Repetiti ve
(pulse width limited by T
j
max, δ <1%)
6.5 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
=25oC, ID=IAR,VDD=50V)
210 mJ
E
AR
Repetit ive Avalanche Energy
(pulse width limited by T
j
max, δ <1%)
8.4 mJ
I
AR
Avalanc h e Current , Repet it ive or Not -Repetiti ve
(T
c
=100oC, pulse wi dt h limited by Tjmax, δ <1%)
4.1 A
ELECTRICAL CHARACTERISTICS (T
case
=25oC unlessotherwise specified)
OFF
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
V
(BR)DSS
Drain-s ource
Break down Vol t age
ID= 250 µ AVGS=0 400 V
I
DSS
Zero G ate Voltage
Drain Current (V
GS
=0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8 Tc=125oC
250
1000µAµA
I
GSS
Gat e- body Leakage
Current (V
DS
=0)
V
GS
= ± 30 V ± 100 nA
ON (∗)
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
V
GS(t h)
Gat e T hreshold Voltage VDS=VGSID= 250 µA 2.25 3 3.75 V
R
DS(on)
Sta t ic Drain-sour ce O n
Resistance
VGS= 10V ID=3.5A
V
GS
=10V ID=3.5A Tc= 100oC
0.82 1
2
Ω
Ω
I
D(on)
On S t ate Drain Current VDS>I
D(on)xRDS(on)max
VGS=10V
6.5 A
DYNAMIC
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
g
fs
(∗)Forward
Tra nsconductanc e
VDS>I
D(on)xRDS(on)maxID
= 3.5 A 3.1 4.6 S
C
iss
C
oss
C
rss
Input Capacitance
Out put Capacitanc e
Reverse Transfer
Capacit an c e
VDS=25V f=1MHz VGS= 0 700
120
31
900
160
43
pF
pF
pF
STB7NA40
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
t
d(on)
t
r
Turn-on Time
Rise Time
VDD= 200 V ID=3.5A
R
G
=47 Ω VGS=10V
(see tes t circuit, figure 3)
25
75
35
100
ns
ns
(di/dt)
on
Turn-on Current Slope VDD= 320 V ID=7A
R
G
=47 Ω VGS=10V
(see tes t circuit, f igure 5)
220 A/µs
Q
g
Q
gs
Q
gd
Total Ga te Charge
Gat e- Source C har ge
Gate-Drain Charge
VDD=320V ID=7A VGS=10V 34
7
15
45 nC
nC
nC
SWITCHING OFF
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
t
r(Voff)
t
f
t
c
Off-volt ag e Rise Time
Fall Time
Cross-over Time
VDD= 320 V ID=7A
R
G
=47 Ω VGS=10V
(see tes t circuit, figure 5)
40
25
75
55
35
100
ns
ns
ns
SOURCEDRAIN DIODE
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
I
SD
I
SDM
(•)
Source-drain C urr ent
Source-drain C urr ent
(pulsed)
6.5
26
A
A
V
SD
(∗) For ward On Voltage ISD=6.5A VGS=0 1.6 V
t
rr
Q
rr
I
RRM
Revers e Recovery
Time
Revers e Recovery
Charge
Revers e Recovery
Current
ISD= 7 A di/dt = 100 A/µs
V
DD
=100V Tj=150oC
(see tes t circuit, figure 5)
380
4.8
25
ns
µC
A
(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 %
(•) Pulse widthlimitedby safeoperating area
Safe Operating Area ThermalImpedance
STB7NA40
3/10
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