SGS Thomson Microelectronics STB75NF75L-1, STB75NF75L Datasheet

STP75NF75L
STB75NF75L STB75NF75L-1
N-CHANNEL 75V - 0.009 - 75A D2PAK/I2PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
STB75NF75L/-1 STP75NF75L
TYPICAL R
EXCEPTIONA L dv/d t CAPABILITY
100% AVALANCHE TESTED
LOW THRESHOLD DRIVE
V
DSS
75 V 75 V
(on) = 0.009
DS
R
DS(on)
<0.011 <0.011
I
D
75 A
75 A
DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high­efficiency, high-frequency isolate d DC-DC c onverters for Telecom and Computer a pplications. It is also intended for any applications with low gate drive requirements
.
APPLICATIONS
SOLENOID AND RELAY DRIVERS
DC MOTOR CONTROL
DC-DC CONVERTERS
AUTOMOTIVE ENVIRONMENT
3
1
2
D
PAK
TO-263
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
2
PAK
I
TO-262
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
(
I
•)
D
I
D
(
I
••)
DM
P
tot
dv/dt
E
AS
T
stg
T
j
(
Current limited by package
•)
Pulse wi dth limited by safe operating ar ea.
(
••)
.
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)
75 V 75 V
Gate- source Voltage ± 15 V
Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C
75 A
70 A Drain Current (pulsed) 300 A Total Dissipation at TC = 25°C
300 W
Derating Factor 2 W/°C
(1)
Peak Diode Recovery voltage slope 20 V/ns
(2)
Single Pulse Avalanche Energy 680 mJ Storage Temperature Max. Operating Junction Temperature
≤ 75A, di/dt ≤ 500A/µs , VDD ≤ V
(1) I
SD
(2) Starting Tj = 25 oC, ID = 37.5A, VDD = 30V
-55 to 175 °C
(BR)DSS
, Tj ≤ T
JMAX.
1/11April 2002
STB75NF75L/-1 STP75NF75L
THERMA L D ATA
Rthj-case
Rthj-amb
T
Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose
l
Max Max
Typ
0.5
62.5 300
°C/W °C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
(BR)DSS
Drain-source
= 250 µA VGS = 0
D
75 V
Breakdown Voltage
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
V
= ± 15 V
GS
1
10
±100 nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage Drain Current (V
GS
Gate-body Leakage Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage Static Drain-source On
Resistance
= VGS I
DS
= 10 V ID = 37.5 A
V
GS
V
= 5 V ID = 37.5 A
GS
= 250 µA
D
1 2.5 V
0.009
0.010
0.011
0.013
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
Forward Transconductance
15 V ID= 37.5 A
V
DS =
120 S
µA µA
Ω Ω
= 25V, f = 1 MHz, VGS = 0
C
iss
C
oss
C
rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
V
DS
4300
660 205
pF pF pF
2/11
STB75NF75L/-1 STP75NF75L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 40 V ID = 37.5 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 4.5 V
G
(Resistive Load, Figure 3)
Q
g
Q
gs
Q
gd
Total Gate Charge Gate-Source Charge Gate-Drain Charge
= 60V ID = 75 A VGS= 5V
V
DD
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 40 V ID = 37.5 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 4.5 V
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1. 5 %.
(
•)Pulse width limited by safe operating ar ea.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage Reverse Recovery Time
Reverse Recovery Charge Reverse Recovery Current
I
= 75 A VGS = 0
SD
= 75 A di/dt = 100A/µs
I
SD
V
= 20 V Tj = 150°C
DD
(see test circuit, Figure 5)
35
150
75 18 31
110
60
100 380
7.5
90 nC
75
300
1.3 V
ns ns
nC nC
ns ns
A A
ns
nC
A
Safe Operating Area Thermal Impedance
3/11
STB75NF75L/-1 STP75NF75L
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
4/11
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