SGS Thomson Microelectronics STB75NE75 Datasheet
STB75NE75
N - CHANNEL 75V - 0.01 Ω - 75A - D2PAK
STripFET POWER MOSFET
■ TYPICALR
DS(on)
= 0.01 Ω
■ EXCEPTIONALdv/dtCAPABILITY
■ 100%AVALANCHETESTED
■ APPLICATIONORIENTED
CHARACTERIZATION
■ FORTHROUGH-HOLE VERSION CONTACT
SALESOFFICE
■ ADDSUFFIX ”T4” FORORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
APPLICATIONS
■ SOLENOIDAND RELAY DRIVERS
■ DC MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DCCONVERTERS
■ AUTOMOTIVEENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
March 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Dra in- sour c e Vol t age (VGS=0) 75 V
V
DGR
Dra in- gate Vol t age (RGS=20kΩ)75V
V
GS
Gat e-sourc e Voltage ± 20 V
I
D
Dra in Current (contin uous ) at Tc=25oC75A
I
D
Dra in Current (contin uous ) at Tc=100oC53A
I
DM
(•) D rain Current (p ulsed) 300 A
P
tot
Tot al Dis sipation at Tc=25oC 160 W
Der ati ng Factor 1.06 W/
o
C
dv/dt (
1) Peak Diode Recov er y voltage slope 7 V / ns
T
stg
St orage T em pe rat ure -65 to 175
o
C
T
j
Max. Operat ing Junc t ion Temperature 175
o
C
(•) Pulsewidth limited by safe operating area (1)ISD≤ 75 A, di/dt ≤ 300 A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX
TYPE V
DSS
R
DS(on)
I
D
ST B75NE75 75 V <0. 013 Ω 75 A
1
3
D2PAK
TO-263
(suffix ”T4”)
1/8
THERMAL DATA
R
thj-case
Rthj-a mb
R
thc-sink
T
l
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p
Maximum L ead T empe rat ur e For Soldering Purpos e
0.94
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Un it
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
75 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
=25oC, ID=IAR,VDD=30V)
500 mJ
ELECTRICAL CHARACTERISTICS
(T
case
=25oC unless otherwisespecified)
OFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Break dow n Voltage
ID=250µAVGS=0 75 V
I
DSS
Zero Gate Voltage
Drain Current ( V
GS
=0)
V
DS
=MaxRating
V
DS
=MaxRating Tc= 125oC
1
10
µ
A
µA
I
GSS
Gat e- bod y Leakage
Current (V
DS
=0)
V
GS
=± 20 V
±
100 nA
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage VDS=VGSID= 250 µA 234V
R
DS(on)
Sta t ic Dr ain -s ource On
Resistance
VGS=5V ID= 37.5 A 10 13 m
Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
VGS=10V
75 A
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansc on duc tance
VDS>I
D(on)xRDS(on)maxID
=37. 5 A 40 S
C
iss
C
oss
C
rss
Input C apac i t ance
Out put Capacitance
Reverse T r ansfer
Capacit a nc e
VDS=25V f=1MHz VGS= 0 5300
850
310
pF
pF
pF
STB75NE75
2/8
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
d(on)
t
r
Tur n-on Delay T im e
Rise T i me
VDD=40V ID=40A
R
G
=4.7
Ω
VGS=10V
(Resis t iv e Load, s ee f ig. 3)
32
130
ns
ns
Q
g
Q
gs
Q
gd
Tot al G at e Char ge
Gat e- Source Charge
Gate-Drain Charge
VDD=60V ID=75A VGS= 10 V 150
30
62
200 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
d(off)
t
f
Tur n-of f Delay Time
Fall T ime
VDD=40V ID=40A
R
G
=4.7 Ω VGS=10V
(Resis t iv e Load, s ee f ig. 3)
150
45
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall T ime
Cross-over Time
V
clamp
=60V ID=75A
R
G
=4.7 Ω VGS=4.5V
(Indu ct iv e L oad , see fig. 5)
35
60
100
ns
ns
ns
SOURCEDRAINDIODE
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
75
300
A
A
V
SD
(∗)ForwardOnVoltage ISD=75A VGS=0 1.5 V
t
rr
Q
rr
I
RRM
Reverse Re covery
Time
Reverse Re covery
Charge
Reverse Re covery
Current
ISD= 75 A di/dt = 100 A/µs
V
DD
=30V Tj=150oC
(see test circuit, fig. 5)
130
0.6
9
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
SafeOperating Area ThermalImpedance
STB75NE75
3/8
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