SGS Thomson Microelectronics STB7102TR, STB7102 Datasheet
0.5/2.5 GHz UHF LO BUFFER AMPLIFIER
• OPERATING FREQ UENCY 500-250 0MH z
• LOW CURRENT CONSUMPTION
• EXCELLENT ISOLATION
• ULTRA MINIATURE SOT323-6L PACKAGE
APPLICATIONS
• BUFFER AMPLIFIER FOR 0.5/2.5 GHz
APPLICATIONS
• CDMA/PCS LO BUFFER AMPLIFIER
SOT323-6L (SC70)
ORDER CODE
STB7102TR
(Top View)
3
102
STB7102
BRANDING
102
(Bottom V ie w)
4
4
3
5
DESCRIPTION
The STB7102, designed for RF Mobile Phone
applications (0.5/2.5GHz), is an high isolation
2
1
5
6
6
Local Oscillator Buffer Amplifier. Manufactured in
the third generation of ST proprietary bipolar
process, it offers an excellent isolation and a good
linearity using only 4mA current c onsumption. The
PIN CONNECTION
Pin No. Pin Name
STB7102 is housed in an ultra miniature package
SOT323-6L surface mount package.
1 INPUT
2GND
3GND
4 OUTPUT
5GND
6VCC
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Value Unit
V
T
Supply voltage 3.3 V
cc
Storage temperature -40 to +100
stg
T
Operating ambient temperature -30 to +85
a
2
1
o
C
o
C
1/9February, 25 2002
STB7102
ELECTRICAL CHARACTERISTICS (
(T
= +25oC, Vcc = 2.7V, Zs = ZL = 50Ω, tested in circuit shown in fig.1, unless otherwise specified)
a
CELL BAND
)
Symbol Parameters Test Conditions Min Typ Max Unit
Freq. Frequency Range 990 1030 MHz
Vcc Supply Voltage 2.6 2. 7 2.8 V
Icc Current Consumption 3.3 4.3 5.3 mA
P1dB Output Power at 1dB Compression Point F = 1010 MHz -2 dBm
Gp Power Gain F = 1010 MHz 16.7 dB
NF Noise Figure F = 1010 MHz 2.7 dB
Isol. Reverse Isolation F = 1010 MHz 45 dB
RLin Input Return Loss F = 1010 MHz 30 dB
RLout Output Return Loss F = 1010 MHz 17.8 dB
Figure 1 Cel l Band Applicat io n C ir cui t Co nfi guration
C8
U1
1.5pF
L2
2n2
ULOBA
J1
RF I N
L4
5n6
C1
33pF
3
2
GND
GND
INPUT1VCC
OUT
GND
4
5
6
C5
10nF
C3
33pF
L3
10nH
L1
33nH
C2
1uF
JP1
VCC
1
2
J2
RF OUT
2/9
TYPICAL PERFORMANCE (CELL BAND)
Power Gain vs. Frequency and Voltage
STB7102
Power Gain vs. Frequency and Temperature
20
18
Vcc = 2. 8 V
16
14
Vcc = 2.7 V
Vcc = 2. 6 V
12
10
8
Power Gain (dB)
6
4
2
Ta = 25 °C
0
800 900 1000 1100 1200
Freque ncy (MHz)
Reverse Isolation vs. Frequency and Voltage
0
-10
-20
-30
Ta = 25 °C
20
18
16
14
Ta = 25 °C
Ta = -30 °C
Ta = 85 °C
12
10
8
Power Gain (dB)
6
4
2
Vcc = 2. 7 V
0
800 900 1000 1100 1200
Freque ncy (MHz)
Reverse Isolation vs. Frequency and Temperature
0
Vcc = 2.7 V
-10
-20
-30
-40
Reverse Isolation (dB)
Vcc = 2.7 V
-50
Vcc = 2.6 V
-60
800 900 1000 1100 1200
Vcc = 2.8 V
Frequency (MHz)
Input Return Loss vs. Frequency and Voltage
0
-5
-10
-15
Vcc = 2.7 V
Freque ncy (MHz)
Vcc = 2. 8 V
Vcc = 2.6 V
-20
Input Return Loss (dB)
-25
-30
-35
800 900 1000 1100 1200
Ta = 25 °C
-40
Reverse Isolation (dB)
Ta = -30 °C
-50
Ta = 85 °C
-60
800 900 1000 1100 1200
Ta = 25 °C
Freq ue ncy (MHz)
Input Return Loss vs. Frequency and Temperature
0
-5
-10
-15
-20
Input Return Loss (dB)
-25
Ta = 85 °C
-30
-35
Ta = 25 °CTa = -30 °C
800 900 1000 1100 1200
Freque ncy (MHz)
Vcc = 2.7 V
3/9
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