SGS Thomson Microelectronics STB7101TR, STB7101 Datasheet
1/5January, 22 2002
STB7101
0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER
SOT323-6L (SC70)
ORDER CODE
STB7101
BRANDING
101
1
2
3
6
5
4
(Bottom View)
6
5
4
1
2
3
1
0
1
(Top View)
PIN CONNECTION
Pin No. Pin Name
1GND
2GND
3 INPUT
4VCC
5GND
6 OUTPUT
• OPERATING FREQUENCY 900-1900MHz
• OUTPUT POWER 9.8dBm typ. @ 900MHz
7.5dBm typ. @ 1900MHz
• POWER GAIN G
P
= 20.3dB typ. @ 900MHz
G
P
= 20.5dB typ. @ 1900MHz
APPLICATIONS
PA driver for cellular applications
DESCRIPTION
The STB7101, designed for cellular applications
(0.9/1.9GHz), uses a 20 GHz F
T
silicon bipolar
process. This IC is a wide range amplifier operating
from 900MHz to 1900MHz, in the overall
frequencies range the gain flatness is less than 1
dB. The STB7101 i s housed in a very small SMD
package SOT323-6L.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Value Unit
V
cc
Supply voltage
T
a
= +25 oC, pin 4 and 6
4.5 V
T
stg
Storage temperature -55 to +150
o
C
T
a
Operating ambient temperature -40 to +85
o
C
P
in
Input power
T
a
= +25 oC
10 dBm
STB7101
2/5
ELECTRICAL CHARACTERISTICS (T
a
= +25oC, Vcc = 2.75V, ZL = Zs = 50Ω, unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
cc
Supply voltage 2.6 2.75 3.3 V
I
cc
Circuit current No signal 28 mA
G
p
Power Gain
f = 0.9GHz
f = 1.9GHz
20.3
20.5
dB
NF Noise figure
f = 0.9GHz
f = 1.9GHz
5
4.5
dB
P
1dB
Output 1dB Compr.
Power
f = 0.9GHz
f = 1.9GHz
9.8
7.5
dBm
RL
IN
Input return loss
f = 0.9GHz
f = 1.9GHz
8
6.2
dB
RL
OUT
Output Return loss
f = 0.9GHz
f = 1.9GHz
9.7
9.7
dB
S
12
Isolation
f = 0.9GHz
f = 1.9GHz
-34
-33
dB
P
o
(Sat)
Saturated output power
level
f = 0.9GHz
f = 1.9GHz
11.3
9.7
dBm
OIP3
Output Third Order
Intercept
f = 0.9GHz
f = 1.9GHz
16.5
14.9
dBm
TYPICAL EVALUATION CIRCUIT
Evaluation circuit components
C1 = C2 = C3 = 27pF
C4 = 10nF
L1 = 15nH
L2 = 33nH
GND
3
GND
2
INPUT1Vcc
6
GND
5
OUTPUT
4
U1
STB7101
C1
27p
J1
RF IN
L1
15n
C2
27p
J2
RF OUT
L2 33 n
C3
27p
C4
10n
VCC (+2.75V)
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