SGS Thomson Microelectronics STB70NFS03L Datasheet
N - CHANNEL 30V - 0.008Ω - 70A D2PAK
STripFET
MAIN PRODUCT CHARACTERISTICS
MOSFET
SCHOTTKY
DESCRIPTION:
This product associat es a P owe r MOSFET of t he
third generati on of ST Mic roelectronics unique
”Single Featu r e S ize” stri p- based process and a
low drop S chottky diode. The transis tor shows the
best tra de-off between on-r esis tance and gate
charge. Used as low s ide in buck regulators, the
product is the bes t solution in t erm s of cond uc tion
losses and space saving.
MOSFET PLUS SCHOTTKY RECTIFIER
V
DSS
30V <0.01 Ω 70A
I
F(AV)
3A 30V 0.51V
R
DS(on)
V
RRM
V
F(MAX)
I
D
STB70NFS03L
PRELIMINARY DATA
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
MOSFETABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
Drain-source Voltage (VGS=0) 30 V
DS
Drain- gate Volta ge (RGS=20kΩ)30V
DGR
Gat e- sour c e Volt age ± 22 V
GS
I
Drain Curre nt (cont i nuous) at Tc=25oC70A
D
I
Drain Curre nt (cont i nuous) at Tc= 100oC50A
D
(•) Drain Curre nt (pulse d) 280 A
Tot al Dissipat ion at Tc=25oC 100 W
tot
Derat ing F actor 0.67 W/
T
(•) Pulse width limited by safe operating area
Stora ge Tem pe ra tur e -65 to 175
stg
T
Max. Operat ing Jun ction Temperature 175
j
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Valu e Unit
V
I
F(RMS)
I
F ( AV)
I
FSM
dv/d t Cr it ical R ate Of Rise Of Reverse Voltage 10000 V/µs
April 2000
Repetit iv e Peak Reverse Voltage 30 V
RRM
RMS Forward Cur rent 20 A
Avera ge Forward Current TL=125oC
=0.5
δ
Surge Non Repetitive Forward Current tp= 10 m s
3A
75 A
Sinusoidal
o
C
o
C
o
C
1/6
STB70NFS03L
THERMAL DATA
R
thj-case
R
thj-amb
T
Ther mal Resistance Junc t ion-case Max
Ther mal Resistance Junc t ion-ambient Max
Maximum Lead T e m pe rat ur e F or S o ldering Purpos e
l
1.5
62.5
175
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
=0)
Gat e- bod y Leakage
Current (V
DS
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µA1 V
Sta t ic Drain-s ourc e On
Resistance
On State Drain Current VDS>I
VGS=10V ID=35A
V
=5V ID=18A
GS
D(on)xRDS(on )max
0.008
0.015
0.01
0.018
70 A
VGS=10V
DYNAMIC
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=35 A 40 S
VDS=25V f=1MHz VGS= 0 1470
490
110
µA
µ
Ω
Ω
pF
pF
pF
A
2/6
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