SGS Thomson Microelectronics STB70NF03L-1 Datasheet
STP70NF03L
STB70NF03L-1
N-CHANNEL 30V - 0.008Ω - 70A TO -220/I2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE V
STP70NF03L
STB70NF03L-1
■ TYPICAL R
■ TYPICAL Q
■ OPTIMAL R
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
DS
g
DS
DSS
30 V
30 V
(on) = 0.008 Ω
= 35 nC @ 10 V
(on) x Qg TRADE-OFF
R
DS(on)
< 0.01
< 0.01
I
D
Ω
70 A
Ω
70 A
DESCRIPTION
This application specific Powe r M osfet i s the t hird
generation of STMicroelectronics unique “Single
Feature Size
™” strip-based process. The resul t-
ing transistor shows the best trade-off between onresistance and gate charge. When used as high
and low side in buck regulators, it gives the best
performance in terms of both conduction and
switching losses. This is e xtremely important for
motherboards where fast switching and high e fficiency are of paramount importance.
APPLICATIONS
■ SPECIFICALL Y D ESIGNED AND OP TIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
3
TO-220
2
1
I2PAK
1
INTERNAL SCHEMATIC DIAGRAM
3
2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 15 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 280 A
Total Dissipation at TC = 25°C
Derating Factor 0.67 W/°C
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C
(1) ISD ≤70A, di/dt ≤290A/µs, VDD =24 V ; Tj ≤ T
30 V
30 V
70 A
50 A
100 W
JMAX.
1/9March 2001
STP70NF03L/STB70NF03L-1
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 1.5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 50 V)
j
ID = 250 µA, VGS = 0 30 V
35 A
450 mJ
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 15V ±100 nA
GS
1µA
10 µA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current VDS > I
= VGS, ID = 250µA
DS
VGS = 10 V, ID = 35 A
VGS = 5 V, ID = 18 A
x R
D(on)
DS(on)max,
12 V
0.008 0.01
0.015 0.018
70 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 490 pF
Reverse Transfer
Capacitance
ID= 35 A
V
DS
x R
D(on)
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
40 S
1470 pF
110 pF
Ω
Ω
2/9
STP70NF03L/STB70NF03L-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 350 ns
Total Gate Charge VDD = 24 V, ID = 46A,
Gate-Source Charge
Gate-Drain Charge 10 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time VDD = 15 V, ID = 35 A,
Fall Time 65 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.
2. Pulse width li mited by safe operating area .
Source-drain Current 70 A
(1)
Source-drain Current (pulsed) 280 A
Forward On Voltage
Reverse Recovery Time ISD = 70 A, di/dt = 100A/µs,
Reverse Recovery Charge 110 nC
Reverse Recovery Current 2.9 A
= 15 V, ID = 35 A
DD
R
= 4.7Ω VGS = 4.5 V
G
(see test circuit, Figure 3)
VGS = 10V
RG=4.7Ω, V
GS
= 4.5V
(see test circuit, Figure 3)
ISD = 70 A, VGS = 0
V
= 20 V, Tj = 150°C
DD
(see test circuit, Figure 5)
20 ns
35 45 nC
5
35 ns
1.5 V
75 ns
nC
Ther m al Imp e denceSafe Operating Area
3/9
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