SGS Thomson Microelectronics STB7002TR, STB7002 Datasheet

1/7January, 22 2002
STB7002
1.8GHz THREE GAIN LEVEL LNA
FULLY INTEGRATED 1.8GHz LNA
THREE GAIN LEVELS (0dB, 18dB, 26dB typ.
@ 2.8V)
LOW NOISE FIGURE
TEMPERATURE COM PENSATED
DCS HANDSETS
DESCRIPTION
The STB7002 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for
1.8GHz applications. STB7002 is housed in a small industry-standard MSOP8-EP surface mount package, requiring very little board space (50% reduction vs SO8 Package). MSOP8-EP dimensions are 3mmx5mm with a 1.1mm thickness. STB7002 is ESD protected and requires minimum external components in the application circuit, for the on-chip bias and gain control. Furthermore, temperature and supply voltage compensation ensu res high stability over a wide range of operating conditions.
MSOP8-EP
(exposed pad)
ORDER CODE
STB7002
BRANDING
7002
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
cc
Supply voltage 4 V
Tj Junction Temperature 150 °C
T
stg
Storage temperature -40 to +85 °C
THERMA L DA TA
Symbol Parameter Value Unit
R
th(j-a)
Junction -ambient Thermal Resistance TBD °C/W
STB7002
2/7
ELECTRICAL SPECIFICATION (T
amb
= 25°C, Vcc = 2.8V)
Note(1) : Gp1 m in gain, Gp2 mid gain and Gp3 max gain.
Symbol Parameters Test Conditions Min. Typ. Max. Unit
Vcc Supply voltage 2.7 2.8 2.9 V
I
bias
Bias current
for G
p1
(1)
G
p2
(1)
G
p3
(1)
8 14 10
11.5
17.5
15.0
15.0
22.519mA
Istby
Standby current 20 µA
f Frequency range 1805 1880 MHz
G
p1,2,3
Power gain
G
p1
G
p2
G
p3
-3.0
16.0
24.0
0.0
18.0
26.0
3.0
20.0
28.0
dB
NF
1,2,3
Noise figure
for G
p1
G
p2
G
p3
9
2.9
2.6
dB
P1dB
1,2,3
Input 1 dB Compr.Power
for G
p1
G
p2
G
p3
-15.5
-19
-27
dBm
IIP3
1,2,3
Input Third Order Intercept
for G
p1
G
p2
G
p3
-4
-9
-17
dBm
VSWRi
Input VSWR
for G
p1
G
p2
G
p3
2.5:1
2.2:1
1.5:1
VSWRo
Output VSWR
for G
p1
G
p2
G
p3
1.3:1
1.5:1
1.8:1
AZout Zout LNA on/off 15 %
PINOUT
Pin Number Symbol Description Evaluation circuit components
1 RFin RF input L2 = 3.3nH, C2 =0.5pF 2 Gnd Ground 3 Vcc Voltage supply C4 = 4pF, L1 = 110nH, C7 = 10nF 4 ARLNA0 Enable for power down C3 = 10nF 5 RFout RF output C9 = 3pf, L3 = 5.6nH, C10 = 10nF, C11 = 100pF, L4 = 110nH 6 Gnd Ground 7 GC1 Gain selection C5 = 10nF 8 GC2 Gain selection C8 = 10nF
GAIN SELECTI0 N
G
p1Gp2Gp3
GC1 001 GC2 011
3/7
STB7002
TEST CIRCUIT SCHEMATIC
RF_IN
1
GND
2
VCC
3
ARLNA0
4
GC2
8
GC1
7
GND
6
RF_OUT
5
STB7002
U1
C4 4p
C7 10n
C2
0.5p
C8 10n
C5
10n
C9
3p
C10 10n
C11 100p
C3
10n
L1 110n
L2
3.3n
*
VCC
L3
5.6n
L4 110n
VCC
1 2
JP1
BIAS
C6
4u7
VCC
S2
SW SPDT
S1
SW SPDT
S3
SW SPDT
VCC
VCC
VCC
J1 SMA_IN
J2
SMA_OUT
RF_IN
1
GND
2
VCC
3
ARLNA0
4
GC2
8
GC1
7
GND
6
RF_OUT
5
STB7002
U1
C4 4p
C7 10n
C2
0.5p
C8 10n
C5
10n
C9
3p
C10 10n
C11 100p
C3
10n
L1 110n
L2
3.3n
*
VCC
L3
5.6n
L4 110n
VCC
1 2
JP1
BIAS
C6
4u7
VCC
S2
SW SPDT
S1
SW SPDT
S3
SW SPDT
VCC
VCC
VCC
J1 SMA_IN
J2
SMA_OUT
TEST CIRCUIT PHOTOMASTER (board dimention s 23.5x20. 3mm )
BOTTOM VIEW
23.5mm
20.3mm
TOP VIEW
23.5mm
20.3mm
Loading...
+ 4 hidden pages