SGS Thomson Microelectronics STP6NC90ZFP, STP6NC90Z, STB6NC90Z-1, STB6NC90Z Datasheet
STP6NC90Z - STP6NC90ZFP
STB6NC90Z - STB6NC90Z-1
N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET
TYPE V
STP6NC90Z
STP6NC90Z FP
STB6NC90Z
STB6NC90Z -1
■ TYPICAL R
■ EXTREMELY HIGH dv /dt AND CAPA BILITY GATE
DS
DSS
900 V
900 V
900 V
900 V
(on) = 1.55Ω
R
DS(on)
< 1.9 Ω
< 1.9 Ω
< 1.9 Ω
< 1.9 Ω
I
D
5.4 A
5.4 A
5.4 A
5.4 A
TO - SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW GATE INPUT RESISTANCE
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as request ed b y a l arge variety
of single-switch applications.
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
TO-220
3
1
D²PAK
3
2
1
I²PAK
(Tabless TO-220)
TO-220FP
1
3
2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP(B)6NC90Z(-1) STP6NC90ZFP
(1)
j
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
900 V
900 V
Gate- source Voltage ± 25 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
5.4 5.4(*) A
3.43 3.43(*) A
Drain Current (pulsed) 21 21 A
Total Dissipation at TC = 25°C
135 40 W
Derating Factor 1.08 0.32 W/°C
Gate-source Current ±50 mA
Gate source ESD(HBM-C=100pF, R=15KΩ) 3KV
Insulation Withstand Voltage (DC) -- 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1)ISD ≤5.4A, di/dt ≤100A/µs, VDD ≤ V
(2).Limited only by maximum temperature allowed
(BR)DSS
, Tj ≤ T
JMAX
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
I
GS
V
ESD(G-S)
dv/dt Peak Diode Recovery voltage slope 3 V/ns
V
ISO
T
stg
T
(•)Pu l se width limited by safe operating area
1/13July 2002
STP6NC90Z/STP6NC90ZFP/STB 6N C90Z/STB6NC90Z-1
THERMA L D ATA
TO-220 / D²PAK /
I²PAK
Rthj-case Thermal Resistance Junction-case Max 0.93 3.13 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
T
Maximum Lead Temperature For Soldering Purpose 300 °C
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
∆BV
(BR)DSS
Drain-source
Breakdown Voltage
/∆TJBreakdown Voltage Temp.
DSS
Coefficient
I
DSS
Zero Gate Voltage
Drain Current (V
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
GS
= 0)
ID = 250 µA, VGS = 0 900 V
ID = 1 mA, VGS = 0 1 V/°C
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±20V ±10 µA
GS
TO-220FP
5.4 A
356 mJ
1µA
50 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250µA
DS
VGS = 10V, ID = 3 A
345V
1.55 1.9 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 150 pF
Reverse Transfer
Capacitance
I
D
V
=3A
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
5.7 S
2290 pF
15 pF
2/13
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 8 ns
Total Gate Charge
Gate-Source Charge 13 nC
Gate-Drain Charge 15 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 11 ns
Cross-over Time 14 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Source-drain Current 5.4 A
(2)
Source-drain Current (pulsed) 21.6 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 7.14 µC
Reverse Recovery Current 21 A
= 450 V, ID = 3 A
DD
RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)
V
= 720V, ID = 6A,
DD
VGS = 10V
V
= 720V, ID = 6 A,
DD
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
ISD = 6 A, VGS = 0
I
= 6 A, di/dt = 100A/µs,
SD
VDD = 40 V, Tj = 150°C
(see test circuit, Figure 5)
24 ns
42 58.8 nC
10 ns
1.6 V
680 ns
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 25 V
Voltage
αT Voltage Thermal Coefficient T=25°C Note(3) 1.3
I
Rz Dynamic Resistance
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating ar ea.
3. ∆V
= αT (25°-T ) BV
BV
GSO
(25°)
= 50 mA, VGS = 0
D
90 Ω
10
-4
/°C
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gat e to source. I n this respect the Zener voltage is appropriat e to ach ieve an effi cient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
3/13
STP6NC90Z/STP6NC90ZFP/STB 6N C90Z/STB6NC90Z-1
Safe Operating Area For TO-220/D²PAK/I²PAK Safe Operating Area For TO-220FP
Thermal Impedance For TO-220/D²PAK/I²PAK Thermal Impedance For TO-220FP
Output Characteristics
4/13
Transfer Characteristics
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