SGS Thomson Microelectronics STB6NA80 Datasheet

STB6NA80

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE V

DSS

R

DS(on )

I

D

STB 6NA80 800 V < 1.9 Ω 5.7 A

 TYPICALR  ± 30V GATE TOSOURCE VOLTAGE RATING  100% AVALANCHETESTED  REPETITIVEAVALANCHEDATAAT100  LOW INTRINSIC CAPACITANCES  GATECHARGE MINIMIZED  REDUCEDTHRESHOLD VOLTAGESPREAD  THROUGH-HOLEI2PAK (TO-262) POWER

DS(on)

= 1.68 Ω

o

C

PACKAGEIN TUBE(SUFFIX ”-1”)

 SURFACE-MOUNTING D2PACK (TO-263)

POWERPACKAGEIN TUBE(NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS

 HIGH CURRENT, HIGH SPEED SWITCHING  SWITCHMODE POWER SUPPLIES(SMPS)  DC-AC CONVERTERSFOR WELDING

EQUIPMENTANDUNINTERRUPTIBLE POWERSUPPLIESAND MOTOR DRIVE

3

2

1

I2PAK

TO-262

1

D2PAK TO-263

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Val ue Uni t

V

I

DM

P

T

(•) Pulsewidth limitedby safe operating area

October 1995

Drain-source Voltage (VGS= 0) 800 V

DS

Drain- gate Voltage ( RGS=20kΩ) 800 V

DGR

Gate-s ource Voltage ± 30 V

GS

I

Drain Current (continuous) at Tc=25oC5.7A

D

I

Drain Current (continuous) at Tc=100oC3.6A

D

(•) Drain Current (pulsed) 23 A

Tot al Dissipat ion at Tc=25oC 125 W

tot

Derat ing Fa ct or 1 W/ Sto rage Tem perature -65 t o 15 0

stg

T

Max. Operat ing Juncti on Temper at u r e 150

j

o o

o

C C C

1/10

STB6NA80

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symb ol Param et er Max V al ue Uni t

I

AR

E

I

AR

Therm al Resistanc e Juncti on-c ase Max Therm al Resistanc e Juncti on-am b ient Max Therm al Resistanc e Case-sink Ty p Maxim um Lead Tem p era t ure For So ldering Purpose

l

Avalanc h e Current , Repet it ive or Not -Repetiti ve (pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T Repetit ive Avalanche Energy

AR

=25oC, ID=IAR,VDD=50V)

j

(pulse width limited by T

max, δ <1%)

j

max, δ <1%)

j

Avalanc h e Current , Repet it ive or Not -Repetiti ve

=100oC, pulse wi dt h limited by Tjmax, δ <1%)

(T

c

1

62.5

0.5

300

5.7 A

165 mJ

6.5 mJ

3.6 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

V

(BR)DSS

Drain-s ource

ID= 250 µ AVGS=0 800 V

Break down Vol t age

I

DSS

I

GSS

Zero G ate Voltage Drain Current (V

GS

Gat e- body Leakage Current (V

DS

=0)

V

= Max Rating

DS

= Max Rating x 0.8 Tc=125oC

V

DS

V

= ± 30 V ± 100 nA

GS

250

1000µAµA

ON (∗)

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

V

GS(t h)

R

DS(on)

I

D(on)

Gat e T hreshold Voltage VDS=VGSID= 250 µA 2.25 3 3.75 V Sta t ic Drain-sour ce O n

Resistance

VGS= 10V ID=3A

=10V ID=3A Tc=100oC

V

GS

On S t ate Drain Current VDS>I

D(on)xRDS(on)max

1.68 1.9

3.8

6A

VGS=10V

DYNAMIC

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

g

(∗)Forward

fs

Tra nsconductanc e

C

Input Capacitance

iss

Out put Capacitanc e

oss

Reverse Transfer

rss

Capacit an c e

VDS>I

D(on)xRDS(on)maxID

=3A 4 6.1 S

VDS=25V f=1MHz VGS= 0 1330

160

40

1750

210

55

Ω Ω

pF pF pF

2/10

STB6NA80

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

t

d(on)

t

r

Turn-on Time Rise Time

VDD= 400 V ID=3A

=47 Ω VGS=10V

R

G

(see tes t circuit, figure 3)

(di/dt)

Turn-on Current Slope VDD= 640 V ID=6A

on

=47 Ω VGS=10V

R

G

(see tes t circuit, f igure 5)

Q Q Q

Total Ga te Charge

g

Gat e- Source C har ge

gs

Gate-Drain Charge

gd

VDD=640V ID=6A VGS=10V 58

SWITCHING OFF

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

t

r(Voff)

t

Off-volt ag e Rise Time

t

Fall Time

f

Cross-over Time

c

VDD= 640 V ID=6A

=47 Ω VGS=10V

R

G

(see tes t circuit, figure 5)

SOURCEDRAIN DIODE

35 95

45

125

170 A/µs

78 nC

8

27

90 25

125

120

35

165

ns ns

nC nC

ns ns ns

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

I

SDM

I

SD

Source-drain C urr ent

(•)

Source-drain C urr ent

5.7 23

(pulsed)

(∗) For ward On Voltage ISD=6A VGS=0 1.6 V

V

SD

t

Q

Revers e Recovery

rr

Time Revers e Recovery

rr

ISD= 6 A di/dt = 100 A/µs

=100V Tj=150oC

V

DD

(see tes t circuit, figure 5)

850

15

Charge

I

RRM

Revers e Recovery

35

Current

(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 % (•) Pulse widthlimitedby safeoperating area

Safe Operating Area ThermalImpedance

A A

ns

µC

A

3/10