SGS Thomson Microelectronics STB6NA60 Datasheet

STB6NA60

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE V

DSS

R

DS(on )

I

D

STB 6NA60 600 V < 1.2 Ω 6.5 A

 TYPICALR  ±30V GATE TO SOURCE VOLTAGE RATING  100% AVALANCHETESTED  REPETITIVEAVALANCHEDATAAT100  LOW INTRINSIC CAPACITANCES  GATECHARGE MINIMIZED  REDUCEDTHRESHOLD VOLTAGESPREAD  THROUGH-HOLEI2PAK (TO-262) POWER

DS(on)

=1Ω

o

C

PACKAGEIN TUBE(SUFFIX ”-1”)

 SURFACE-MOUNTING D2PACK (TO-263)

POWERPACKAGEIN TUBE(NO SUFFIX) OR IN TAPE& REEL(SUFFIX ”T4”)

APPLICATIONS

 HIGH CURRENT, HIGHSPEED SWITCHING  SWITCHMODE POWER SUPPLIES(SMPS)  DC-AC CONVERTERSFOR WELDING

EQUIPMENTANDUNINTERRUPTIBLE POWERSUPPLIESAND MOTOR DRIVE

3

2

1

I2PAK

TO-262

1

D2PAK TO-263

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Val ue Uni t

V

I

DM

P

T

(•) Pulsewidth limitedby safe operating area

October 1995

Drain-source Voltage (VGS= 0) 600 V

DS

Drain- gate Volt age (RGS=20kΩ) 600 V

DGR

Gate-s ource Voltage ± 30 V

GS

I

Drain Cur rent (con t inuous) at Tc=25oC6.5A

D

I

Drain Cur rent (con t inuous) at Tc=100oC4.3A

D

(•) Drain Cur rent (pul sed) 26 A

Tot al Dis s ipation at Tc=25oC 125 W

tot

Derat ing Fa ct or 1 W/ Sto rage Tem perature -65 t o 150

stg

T

Max. O per ating Junc t i on Tem perat u r e 150

j

o o

o

C C C

1/10

STB6NA60

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symb ol Param et er Max Val ue Unit

I

AR

E

I

AR

Therm al Resistanc e Juncti on-c ase Max Therm al Resistanc e Juncti on-am b ient Max Therm al Resistanc e Case-sink Ty p Maxim um Lead T em p erat ur e For Soldering Purpose

l

Avalanc h e Current , Repet it ive or Not - Rep et it i v e (pulse w idt h lim i te d by T

Single P ulse A v al anc he E ne r gy

AS

(starting T Repetit ive Avalan che E ner gy

AR

=25oC, ID=IAR,VDD=50V)

j

(pulse w idt h lim i te d by T

max, δ <1%)

j

max, δ <1%)

j

Avalanc h e Current , Repet it ive or Not - Rep et it i v e

=100oC, pulse widt h limi t ed by Tjmax, δ <1%)

(T

c

1

62.5

0.5

300

6.5 A

215 mJ

9.5 mJ

4.3 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symb ol P ar ameter Test Co ndi t ion s Min. Typ . Max. Unit

V

(BR)DSS

Drain-s ource

ID= 250 µAVGS=0 600 V

Break down Vol t age

I

DSS

I

GSS

Zero G ate Voltage Drain Current ( V

GS

Gat e- body Leakage Current (V

DS

=0)

V

= M ax R at ing

DS

= M ax R at ing x 0.8 Tc=125oC

V

DS

V

= ± 30 V ± 100 nA

GS

250

1000µAµA

ON (∗)

Symb ol P ar ameter Test Co ndi t ion s Min. Typ . Max. Unit

V

GS(t h)

R

DS(on)

I

D(on)

Gat e Thr eshold Volt age VDS=VGSID= 250 µA 2.25 3 3.75 V Sta t ic Drain-source O n

Resistance

VGS= 10V ID=3A

=10V ID=3A Tc=100oC

V

GS

On State Drain Cu rr ent VDS>I

D(on)xRDS(on)max

6.5 A

11.2

2.4

VGS=10V

DYNAMIC

Symb ol P ar ameter Test Co ndi t ion s Min. Typ . Max. Unit

g

(∗)Forward

fs

Tra nsconductance

C

Input Capacitance

iss

Out put Capac i t anc e

oss

Reverse Transfer

rss

Capacit an c e

VDS>I

D(on)xRDS(on)maxID

=3A 3.5 5.6 S

VDS=25V f=1MHz VGS= 0 1 150

155

40

1550

210

55

Ω Ω

pF pF pF

2/10

STB6NA60

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symb ol P ar ameter Test Co ndi t ion s Min. Typ . Max. Unit

t

d(on)

t

r

Turn-on Time Rise Time

VDD= 300 V ID=3A

=47 Ω VGS=10V

R

G

(see t est cir cuit, figure 3)

(di/dt)

Turn-on Current Slope VDD= 480 V ID=6A

on

=47 Ω VGS=10V

R

G

(see t est cir cuit, figure 5)

Q Q Q

Total Ga te Charge

g

Gat e- Source Char ge

gs

Gate-Drain Charge

gd

VDD=480V ID=3A VGS=10V 54

SWITCHING OFF

Symb ol P ar ameter Test Co ndi t ion s Min. Typ . Max. Unit

t

r(Voff)

t

Off-voltage Rise Tim e

t

Fall Time

f

Cross-over Ti me

c

VDD= 480 V ID=6A

=47 Ω VGS=10V

R

G

(see t est cir cuit, figure 5)

SOURCEDRAIN DIODE

35 90

50

125

200 A/µs

75 nC

8

23

80 20

115

110

30

155

ns ns

nC nC

ns ns ns

Symb ol P ar ameter Test Co ndi t ion s Min. Typ . Max. Unit

I

SDM

I

SD

Source-drain Current

(•)

Source-drain Current

6.5 26

(pulsed)

(∗) F orward O n V olt ag e ISD=6.5A VGS=0 1.6 V

V

SD

t

Q

Revers e Recovery

rr

Time Revers e Recovery

rr

ISD= 6 A di/dt = 100 A/ µs

=100V Tj=150oC

V

DD

(see t est cir cuit, figure 5)

600

9

Charge

I

RRM

Revers e Recovery

30

Current

(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 % (•) Pulse widthlimitedby safeoperating area

Safe Operating Area ThermalImpedance

A A

ns

µC

A

3/10