SGS Thomson Microelectronics STB6LNC60 Datasheet
1/9October 2001
STB6LNC60
N-CHANNEL 600V - 1Ω - 5.8A D2PAK
PowerMesh™II MOSFET
(1)ISD ≤5.8A, di/dt ≤100A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX.
INTERNAL SCHEMATIC DIAGRAM
■ TYPICAL R
DS
(on) = 1.0 Ω
■ EXTREMELY HIGH dv /d t CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
™II is the evolution of the first
generation of MESH OVERLAY
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea ding edge for what concerns switching speed, gate
charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLI ES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
(•)Pu l se width limite d by safe operat i ng area
(*) Limited only by maximum temperature allowed
TYPE V
DSS
R
DS(on)
I
D
STB6LNC60 600 V < 1.25 Ω 5.8 A
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (VGS = 0)
600 V
V
DGR
Drain-gate Voltage (RGS = 20 kΩ)
600 V
V
GS
Gate- source Voltage ±30 V
I
D
Drain Current (continuos) at TC = 25°C
5.8 A
I
D
Drain Current (continuos) at TC = 100°C
3.65 A
I
DM
(●)
Drain Current (pulsed) 23.2 A
P
TOT
Total Dissipation at TC = 25°C
100 W
Derating Factor 0.8 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
T
stg
Storage Temperature
–65 to 150 °C
T
j
Max. Operating Junction Temperature
D2PAK
1
3
STB6LNC60
2/9
THERMA L D ATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case Thermal Resistance Junction-case Max 1.25 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
5.8 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID = IAR, VDD = 50 V)
300 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0 600 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1µA
V
DS
= Max Rating, TC = 125 °C
50 µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ±30V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= VGS, ID = 250µA
234V
R
DS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 3 A
1.0 1.25 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance VDS > I
D(on)
x R
DS(on)max,
I
D
=3A
6S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, VGS = 0
830 pF
C
oss
Output Capacitance 120 pF
C
rss
Reverse Transfer
Capacitance
15.5 pF
3/9
STB6LNC60
Thermal Impede nce
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating area .
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
V
DD
= 300 V, ID = 3 A
RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
14.5 ns
t
r
Rise Time 15.5 ns
Q
g
Total Gate Charge
V
DD
= 480V, ID = 6 A,
VGS = 10V
28 39 nC
Q
gs
Gate-Source Charge 4.8 nC
Q
gd
Gate-Drain Charge 17.5 nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 480V, ID = 6 A,
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
9ns
t
f
Fall Time 7.5 ns
t
c
Cross-over Time 16 ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
Source-drain Current 5.8 A
I
SDM
(2)
Source-drain Current (pulsed) 23.2 A
VSD (1)
Forward On Voltage
ISD = 6 A, VGS = 0
1.6 V
t
rr
Reverse Recovery Time
I
SD
=6 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
450 ns
Q
rr
Reverse Recovery Charge 2.4 µC
I
RRM
Reverse Recovery Current 10.6 A
Safe Operating Area
Loading...