SGS Thomson Microelectronics STB60NF06 Datasheet
STB60NF06
N-CHANNEL 60V - 0.014Ω - 60A D2PAK
STripFET™ POWER MOSFET
TYPE V
DSS
STB60NF06 60V < 0.016
■ TYPICAL R
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED
(on) = 0.014Ω
DS
R
DS(on)
I
D
Ω
60A
CHARACTERIZATION
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated D C-DC
converters for T el ecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL
■ AUTOMOTIVE
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60 V
60 V
Gate- source Voltage ± 20 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 240 A
Total Dissipation at TC = 25°C
60 A
42 A
110 W
Derating Factor 0.73 W/°C
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C
(1) I
≤
60A, di/dt≤400 A/µs, V
SD
≤
24V, Tj≤T
DD
jMAX
1/9February 2001
STB60NF06
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 1.36 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 30 V)
j
ID = 250 µA, VGS = 0 60 V
30 A
360 mJ
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 20V ±100 nA
GS
1µA
10 µA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 30 A
24V
0.014 0.016
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS =15V , ID= 30 A 20 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 360 pF
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, VGS = 0
DS
1810 pF
125 pF
Ω
2/9
STB60NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 108 ns
Total Gate Charge VDD = 48V, ID =60A,VGS = 10V 49
Gate-Source Charge 18 nC
Gate-Drain Charge 14 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
d(off)
t
f
t
f
t
c
Turn-off-Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 60 A
(1)
Source-drain Current (pulsed) 240 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 30 V, ID = 30 A
DD
R
= 4.7Ω VGS = 10V
G
(see test circuit, Figure 3)
VDD = 30 V, ID = 30 A,
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 3)
Vclamp =48V, I
RG=4.7Ω, V
D
GS
= 60 A
= 10V
(see test circuit, Figure 3)
ISD = 60 A, VGS = 0
= 60 A, di/dt = 100A/µs,
I
SD
VDD = 25V, Tj = 150°C
(see test circuit, Figure 5)
16 ns
66
43
20
40
12
21
1.3 V
73
182
5
nC
ns
ns
ns
ns
ns
ns
nC
A
Safe Operating Area Ther m al Impede n c e
3/9
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