SGS Thomson Microelectronics STB60NF03L Datasheet
STB60NF03L
N-CHANNEL 30V - 0.008
TYPE V
ST B60NF03L 30 V < 0.01 Ω 60 A
■ TYPICALR
■ OPTIMIMIZED FOR HIGH SWITCHING
DS(on)
DSS
= 0.008 Ω
OPERATIONS
■ LOW THRESHOLDDRIVE
■ LOGICLEVEL GATE DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ LOW VOLTAGEDC-DC CONVERTERS
■ HIGHCURRENT, HIGHSPEED SWITCHING
■ HIGHEFFICIENCY SWITCHINGCIRCUITS
R
DS(on)
I
D
Ω
- 60A D2PAK
STripFET POWER MOSFET
PRELIMINARY DATA
3
1
D2PAK
TO-263
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
E
AS(1
T
(•) Pulse width limited by safeoperating area (1) starting Tj
September 1999
Dra in- sour c e Volt age ( VGS=0) 30 V
DS
Dra in- gate V ol t age (RGS=20kΩ)30V
DGR
Gat e-source Voltage
GS
I
Dra in Current ( continuous ) a t Tc=25oC60A
D
I
Dra in Current ( continuous ) a t Tc=100oC42A
D
(•) Dra in Current ( p uls ed ) 240 A
Tot al Dissipat ion at Tc=25oC 100 W
tot
Der ati ng Fac t or 0.67 W/
) Single Puls e Av alan che Energy 650 mJ
St orage Tempe rat ure -65 t o 175
stg
T
Max. O perating Junc t ion T emperat ure 175
j
=25oC,ID=30A,VDD= 20V
20 V
±
o
C
o
C
o
C
1/6
STB60NF03L
THERMAL DATA
R
thj-case
R
thj-amb
T
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Maximum Lead Temperature For Solder ing Purpose
l
1.5
62.5
300
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n V o lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curr e nt (V
GS
Gat e- bod y L eakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µA11.52.5V
Sta t ic Drain -s our c e O n
Resistance
On State Drain Current VDS>I
VGS=10V ID=30A
V
=4.5V ID=30A
GS
D(on)xRDS(on)max
0.008
0.0095
0.01
0.015
60 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=30 A 60 S
VDS=25V f=1MHz VGS= 0 2550
630
215
µA
µ
Ω
Ω
pF
pF
pF
A
2/6
Loading...