SGS Thomson Microelectronics STB60NE06L-16 Datasheet
STB60NE06L-16
N - CHANNEL 60V - 0.014Ω - 60A D2PAK
STripFET POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST B60NE06L-16 60 V < 0.16 Ω 60 A
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ LOW GATE CHARGE
■ HIGHCURRENT CAPABILITY
■ 175
■ LOW THRESHOLDDRIVE
■ FORTHROUGH-HOLE VERSION CONTACT
o
C OPERATINGTEMPERATURE
DS(on)
= 0.014 Ω
SALESOFFICE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronisunique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a
remarkablemanufacturingreproducibility.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ DC-DC& DC-ACCONVERTERS
■ AUTOMOTIVEENVIRONMENT
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/ dt Peak Diode Re c overy v olt age slope 1 V/ns
T
(•) Pulsewidth limited by safeoperating area (1)ISD≤60 A, di/dt ≤ 300 A/µs, VDD≤ V
May 2000
Dra in- sour c e Vol t age (VGS=0) 60 V
DS
Dra in- gate Voltage (RGS=20kΩ)60V
DGR
Gat e-source Voltage
GS
I
Dra in Current ( continuous) at Tc=25oC60A
D
I
Dra in Current ( continuous) at Tc=100oC42A
D
15 V
±
(•) Dra in Current ( p uls ed ) 240 A
Tot al Diss ipation at Tc=25oC 150 W
tot
Derating Factor 1 W/
St orage T empe r at ure -65 to 175
stg
T
Max. Operat ing Junction Tem perature 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
STB60NE06L-16
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum L ead Temperat ur e For Solder ing Purp ose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse A valanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max)
j
1
62.5
0.5
300
60 A
400 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 60 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 15 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µ A11.62.5V
Sta t ic Drain-sour ce On
Resistance
VGS=5V ID=30A
=10V ID=30A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on )max
0.014
0.012
60 A
0.016
0.014ΩΩ
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=30 A 30 S
VDS=25V f=1MHz VGS= 0 4150
590
150
µ
µA
pF
pF
pF
A
2/8
STB60NE06L-16
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
Tur n-on Delay T ime
Rise Time
r
VDD=30V ID=30A
R
=4.7 W VGS=5V
G
50
155
(see test circuit, figure 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD=40V ID=60A VGS=5V 55
15
30
70 nC
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-volt age Rise Tim e
Fall T ime
f
Cross-over Time
c
VDD=48V ID=20A
=4.7 Ω VGS=5V
R
G
(see test circuit, figure 5)
45
220
280
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area
Source-drain Current
(•)
Source-drain Current
60
240
(pulsed)
(∗)ForwardOnVoltage ISD=60A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 60 A di/dt = 100 A/µs
=30V Tj= 150oC
V
DD
(see test circuit, figure 5)
85
300
Charge
Reverse Recovery
7
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
nC
A
SafeOperating Area ThermalImpedance
3/8
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