SGS Thomson Microelectronics STB60NE06-16 Datasheet
STB60NE06-16
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE ” POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST B60NE 06-1 60 V < 0.016 Ω 60 A
■ TYPICALR
■ EXCEPTIONALdV/dt CAPABILTY
■ 100% AVALANCHETESTED
■ LOW GATE CHARGE 100
■ HIGH dV/dt CAPABILITY
■ APPLICATIONORIENTED
DS(on)
=0.013 Ω
o
C
CHARACTERIZATION
■ FOR THROUGH-HOLE VERSIONCONTACT
SALESOFFICE
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSONunique ” Single FeatureSize”
strip-based process. The resulting transistor
shows extremelyhigh packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturingreproducibility.
APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC& DC-AC CONVERTERS
■ SYNCHRONOUSRECTIFICATION
3
1
D2PAK
TO-263
(Suffix”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
DGR
V
I
DM
P
dV/ dt(
T
(•) Pulsewidth limitedby safe operatingarea (1)ISD≤ 60 A,di/dt ≤ 200 A/µs, VDD
January 1998
Drain-s ou r ce V olt ag e (VGS=0) 60 V
DS
Drain- gate Voltag e (RGS=20kΩ)
Gate-source Voltage ± 20 V
GS
I
Drain Curren t (cont inu ous) at Tc=25oC60A
D
I
Drain Curren t (cont inu ous) at Tc=100oC42A
D
60 V
(•) Drain Curren t (pulsed) 240 A
Tot al Di s sipa t ion at Tc=25oC 150 W
tot
Derating Factor 1 W/
1) Pea k Diode Recovery vo lta ge slope 6 V/ns
Storage Temperature -65 to 175
stg
T
Max. Operat ing Junct ion Tempe rature 175
j
≤ V
(BR)DSS,TJ
≤
T
JMAX
o
C
o
C
o
C
1/9
STB60NE06-16
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sin k
T
Ther mal Resist ance Junctio n- case Max
Ther mal Resist ance Junctio n- ambient Max
Ther mal Resist ance Case-si nk Ty p
Maximum Lead T e mpera t ure For Sold eri ng P urp os e
l
1
62.5
0.5
300
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Valu e Unit
I
AR
E
Avalanch e Curre nt , Repet it i v e or Not - Re petit ive
(pulse w idth limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max, δ <1%)
j
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
60 A
350 mJ
OFF
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Drain-sou rc e
Breakdown Voltage
Zer o Gate Vo lt age
Drain Cur rent (V
GS
Gat e-body Leaka ge
Current (V
DS
=0)
=0)
=250µAVGS=0
I
D
V
=MaxRating
DS
=MaxRating Tc=125
V
DS
o
C
= ± 20 V
V
GS
60 V
1
10
± 100 nA
o
C/W
o
C/W
oC/W
o
C
µA
µA
ON (∗)
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
234V
Voltage
R
DS(on)
Stati c Drain-so urce On
VGS=10V ID= 30 A 0.013 0.016 Ω
Resistance
I
D(on)
On Stat e Drain Cur rent VDS>I
D(on)xRDS(on)max
60 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr anscond uctanc e
C
C
C
Input Capaci t an ce
iss
Out put C apa citance
oss
Reverse Transfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=30 A 20 35 S
VDS=25V f=1MHz VGS= 0 4600
580
140
6200
800
200
pF
pF
pF
2/9
STB60NE06-16
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on Time
Rise Time
t
r
Turn-on Current Slope VDD=48V ID=60A
on
Total Gate Charge
g
Gat e-Sou r ce Charge
gs
Gate-Drain Charge
gd
VDD=30V ID=30A
=4.7 Ω VGS=10V
R
G
=47 Ω VGS=10 V
R
G
VDD=48V ID=60A VGS= 10 V 115
SWITCHINGOFF
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
t
r(Voff)
t
Of f - voltag e Rise T ime
t
Fall Time
f
Cross-over Time
c
VDD=48V ID=60A
=4.7 Ω VGS=10V
R
G
SOURCE DRAIN DIODE
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse widthlimited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) For ward On Voltage ISD=60A VGS=0 1.5 V
Reverse Recov ery
rr
Time
Reverse Recov ery
rr
= 60 A di/dt = 10 0 A/µs
I
SD
=30V Tj=150oC
V
DD
Charge
Reverse Recov ery
Current
40
12560180
280 A/ µs
160 nC
25
40
15
150
180
25
210
260
60
240
100
0.4
8
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Area ThermalImpedance
3/9
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