SGS Thomson Microelectronics STB60NE03L-12 Datasheet

®

N - CHANNEL 30V - 0.009 Ω - 60A - D2PAK

"SINGLE FEATURE SIZE " POWER MOSFET

TYPE V

DSS

STB60NE03L-12 30 V <0.012 Ω 60 A

■ TYPICAL R

■ AVALANCE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVA LANCHE DATA AT 100

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

o

■ 175

■ APPLICATION ORIENTED

C OPERATING TEMPERATURE

DS(on)

= 0.009 Ω

CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.

R

DS(on)

I

D

o

C

STB60NE03L-12

PRELIMINARY DATA

3

1

D2PAK

TO-263

(Suffix "T4")

INTER NAL SCH E M ATI C DIAG RA M

APPLICATIONS

■ HIGH CURRENT, HIGH SPE ED SWI TCHING

■ SOLENOID AND RELAY DRIVER S

■ DC-DC & DC-AC CONVERT E R

■ AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

DM

P

dv/dt Peak Diode Recovery voltage slope 7 V/ns

T

(•) Pulse width limited by safe operating area (1) ISD ≤ 60 A, di/dt ≤ 300 A/µs, VDD ≤ V

July 1998

Drain-source Voltage (VGS = 0) 30 V

DS

Drain- gate Voltage (RGS = 20 kΩ)

DGR

Gate-source Voltage ± 20 V

GS

I

Drain Current (continuous) at Tc = 25 oC60A

D

I

Drain Current (continuous) at Tc = 100 oC42A

D

30 V

(•) Drain Current (pulsed) 240 A

Total Dissipation at Tc = 25 oC100W

tot

Derating Factor 0.67 W/oC

Storage Temperature -65 to 175

stg

T

Max. Operating Junction Temperature 175

j

, Tj ≤ T

(BR)DSS

JMAX

o

C

o

C

1/5

STB60NE3L1-16

THERMAL DATA

R

thj-case

Rthj-amb

R

thc-si n k

T

Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose

l

AVALANCHE CHARACTERI S TICS

Symbol Parameter Max Value Unit

I

AR

E

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T

= 25 oC, ID = IAR, V

j

ma x)

j

DD

= 15 V)

1.5

62.5

0.5

300

60 A

150 mJ

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

I

= 250 µA V

D

GS

= 0

30 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

= Max Rating

V

DS

V

= Max Rating Tc = 125 oC

DS

V

= ± 20 V

GS

1

10

± 100 nA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold

V

= VGS ID = 250 µA

DS

1 1.7 2.5 V

Voltage

R

DS(on)

I

D(on)

Static Drain-source On
Resistance

VGS = 10 V ID = 30 A
V

= 5 V ID = 30 A

GS

On State Drain Current VDS > I

V

= 10 V

GS

D(on)

x R

DS(on)max

0.009 0.012

0.018ΩΩ

60 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (∗) Forward

Transconductance

C

C

C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS > I

V

DS

x R

D(on)

DS(on)max

= 25 V f = 1 MHz V

ID =30 A 20 30 S

= 0 2200

GS

570
200

2800

750
250

µA
µA

pF
pF
pF

2/5