SGS Thomson Microelectronics STB60NE03L-10 Datasheet
STB60NE03L-10
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE ” POWER MOSFET
■ TYPICALR
DS(on)
=0.007 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ LOW GATE CHARGE 100
o
C
■ APPLICATIONORIENTED
CHARACTERIZATION
■ FOR THROUGH-HOLE VERSIONCONTACT
SALESOFFICE
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremelyhigh packing density for low onresistance, rugged avalance characteristics and
less critical alignment steps therefore a remarkable manufacturingreproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDANDRELAY DRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BAG,LAMPDRIVERS,Etc. )
INTERNAL SCHEMATIC DIAGRAM
December 1997
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
V
DS
Drain-source Voltage (VGS=0) 30 V
V
DGR
Drain- gate Voltage ( RGS=20kΩ)
30 V
V
GS
Gat e- source Volt age ± 15 V
I
D
Drain Current (c on t in uous) at Tc=25oC60A
I
D
Drain Current (c on t in uous) at Tc=100oC42A
I
DM
(•) Drain Current (pulsed) 240 A
P
tot
Tot al Dissip at i on at Tc=25oC120W
Derating Factor 0.8 W/
o
C
dv/ dt Peak Diode Recov ery vo lt age sl ope 7 V/ns
T
stg
Sto rage T emperat ure -65 to 175
o
C
T
j
Max. Oper at in g Junc t io n Temperatur e 175
o
C
(•) Pulsewidth limitedby safe operating area (1)ISD≤ 60 A,di/dt ≤ 300 A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX
TYPE V
DSS
R
DS(on)
I
D
STB60NE03L-10 30 V < 0.010 Ω 60 A
1
3
D2PAK
TO-263
(suffix ”T4”)
1/8
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sin k
T
l
Ther mal Resist ance Junction- case Max
Ther mal Resist ance Junction- ambient Max
Ther mal Resist ance Case-sink Ty p
Maximum Lead Tempera t ure For Sold ering Purpose
1.25
62.5
0.5
300
o
C/W
oC/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Va lu e Uni t
I
AR
Avalanche Current, Repetit i v e or Not-Repetitive
(pulse w idth limited by T
j
max, δ <1%)
60 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
=25oC, ID=IAR,VDD=20V)
600 mJ
ELECTRICAL CHARACTERISTICS (T
case
=25oC unlessotherwise specified)
OFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
=250µAVGS=0
30 V
I
DSS
Zer o Gate Vo lt age
Drain Cur re nt (V
GS
=0)
V
DS
=MaxRating
V
DS
=MaxRating Tc=125
o
C
1
10
µA
µA
I
GSS
Gat e-body Leakage
Current (V
DS
=0)
V
GS
= ± 15 V
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
Voltage
V
DS=VGSID
=250µA
11.72.5V
R
DS(on)
Stati c Drain-so urce On
Resistance
VGS=10V ID=30A
V
GS
=5V ID=30A
0.007 0. 01
0.015
Ω
I
D(on)
On State Drain Cu rr e nt VDS>I
D(on)xRDS(on)max
VGS=10V
60 A
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansconductance
VDS>I
D(on)xRDS(on)maxID
=30 A 25 S
C
iss
C
oss
C
rss
Input Capaci t ance
Out put Capa citance
Reverse Transfer
Capa cit an c e
VDS=25V f=1MHz VGS= 0 4000
1000
320
5400
1350
450
pF
pF
pF
STB60NE03L-10
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Tim e
VDD=15V ID=30A
R
G
=4.7 Ω VGS=5V
(see test circuit, figure 3)
35
24050320
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gat e-Sourc e Charge
Gate-Drain Charge
VDD=24V ID=60A VGS=5V 62
20
31
85 nC
nC
nC
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Of f - voltage Rise T im e
Fall Time
Cross-over Time
VDD=24V ID=60A
R
G
=4.7 Ω VGS=5V
(see test circuit, figure 5)
60
80
150
80
110
200
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
60
240
A
A
V
SD
(∗) For ward O n Vo lt age ISD=60A VGS=0 1.5 V
t
rr
Q
rr
I
RRM
Reverse Recover y
Time
Reverse Recover y
Charge
Reverse Recover y
Current
I
SD
= 60 A di/dt = 100 A/µs
V
DD
=24V Tj=150oC
(see test circuit, figure 5)
70
0.13
4
ns
µC
A
(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 %
(•) Pulse widthlimited by safe operating area
Safe Operating Area ThermalImpedance
STB60NE03L-10
3/8
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