SGS Thomson Microelectronics STP5NC90Z, STP5NC90ZFP, STB5NC90ZT4, STB5NC90Z-1, STB5NC90Z Datasheet
1/13December 2002
STP5NC90Z - STP5NC90ZFP
STB5NC90Z - STB5NC90Z-1
N-CHANNEL 900V - 2.1Ω - 4.6A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET
■ TYPICAL R
DS
(on) = 2.1Ω
■ EXTREMELY HIGHdv/dtAND CAPABILITYGATE
TO - SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ V ER Y LOW GATE INPUT RESISTANCE
■ GAT E CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-toback Zenerdiodes between gate andsource. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
■ S INGLE -ENDED S MPS IN MONITORS,
COMPUTER AND INDUSTRIALAPPLICATION
■ WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE V
DSS
R
DS(on)
I
D
STP5NC90Z/FP 900V <2.5Ω 4.6 A
STB5NC90Z/-1 900V <2.5Ω 4.6 A
Symbol Parameter Value Unit
STP(B)5NC90Z(-1) STP5NC90ZFP
V
DS
Drain-source Voltage (VGS=0)
900 V
V
DGR
Drain-gate Voltage (RGS=20kΩ)
900 V
V
GS
Gate- source Voltage ± 25 V
I
D
Drain Current (continuous) at TC= 25°C
4.6 4.6(*) A
I
D
Drain Current (continuous) at TC= 100°C
2.9 2.9(*) A
I
DM
(●)
Drain Current (pulsed) 18 18 A
P
TOT
Total Dissipation at TC= 25°C
125 40 W
Derating Factor 1 0.32 W/°C
I
GS
Gate-source Current (*) ±50 mA
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=15KΩ) 3KV
dv/dt Peak Diode Recovery voltage slope 3 V/ns
V
ISO
Insulation Winthstand Voltage (DC) -- 2000 V
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
(1)ISD≤4.6A,di/dt ≤100A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX
(*).Limited onlyby maximum temperatureallowed
TO-220
1
2
3
TO-220FP
1
2
3
I²PAK
(Tabless TO-220)
1
3
D²PAK
STP5NC90Z - STP5NC90ZFP - STB5NC90Z - ST B 5NC90Z -1
2/13
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
TO-220 / D²PAK /
I²PAK
TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1 3.13 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
4.6 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID=IAR,VDD=50V)
220 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, VGS=0
900 V
∆BV
DSS
/∆T
J
Breakdown Voltage Temp.
Coefficient
I
D
=1mA,VGS=0
1 V/°C
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
= Max Rating
1µA
V
DS
= Max Rating, TC= 125 °C
50 µA
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
= ±20V
±10 µA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID
= 250µA
345V
R
DS(on)
Static Drain-source On
Resistance
V
GS
=10V,ID= 2.5 A
2.1 2.5 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1)
Forward Transconductance
V
DS>ID(on)xRDS(on)max,
ID= 2.5A
5.6 S
C
iss
Input Capacitance
V
DS
=25V,f=1MHz,VGS=0
1840 pF
C
oss
Output Capacitance 116 pF
C
rss
Reverse Transfer
Capacitance
12 pF
3/13
STP5NC90Z - STP5NC90ZFP - STB5NC90Z - STB5NC90Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆V
BV
= αT(25°-T)BV
GSO
(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-inback-to-back Zener diodesha ve specifically beendesigned toenhance not onlythe device’s
ESD capability, but also to make them saf ely absorb possible voltage transients that may occasionally
be appliedfrom gate to source.In this r es pec t the Zenervoltage is appropiateto achieve anefficient and
cost-effective intervention toprotect the device’s integrity. These integrated Zener diodes thusavoid the
usage of external components.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
Rise Time
V
DD
=450V,ID= 2.5 A
RG= 4.7Ω VGS=10V
(see test circuit, Figure 3)
24 ns
t
r
8ns
Q
g
Total Gate Charge
V
DD
=720V,ID= 5A,
V
GS
=10V
40 56 nC
Q
gs
Gate-Source Charge 9 nC
Q
gd
Gate-Drain Charge 15 nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 720V, ID=5A,
RG=4.7Ω, VGS= 10V
(see test circuit, Figure 5)
12 ns
t
f
Fall Time 13 ns
t
c
Cross-over Time 20 ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
Source-drain Current 4.6 A
I
SDM
(2)
Source-drain Current (pulsed) 18 A
V
SD
(1)
Forward On Voltage
ISD= 5 A, VGS=0
1.6 V
t
rr
Reverse Recovery Time
ISD= 5 A, di/dt= 100A/µs, V
DD
= 100V, Tj= 150°C
(see test circuit, Figure 5)
510 ns
Q
rr
Reverse Recovery Charge 4 µC
I
RRM
Reverse Recovery Current 15 A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain) 25 V
αT Voltage Thermal Coefficient T=25°C Note(3) 1.3
10
-4
/°C
Rz Dynamic Resistance
I
D
=50mA
90 Ω
STP5NC90Z - STP5NC90ZFP - STB5NC90Z - ST B 5NC90Z -1
4/13
Output Characteristics
Thermal Impedance For TO-220/D²PAK/I²PA K
Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D²PAK/I²PA K
Thermal Impedance For TO-220FP
Transfer Characteristics
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