SGS Thomson Microelectronics STB5NC50-1, STB5NC50 Datasheet

STP5NC50 - STP5NC50FP

STB5NC50 - STB5NC50-1

N-CHANNEL 500V - 1.3Ω - 5.5A T O-220/FP/D2PAK/I2PAK

PowerMesh™II MOSFET

TYPE V

STP5NC50
STP5NC50FP
STB5NC50
STB5NC50-1

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% A V ALANCHE TESTED

■ NEW HIGH VOLTAGE BENCHMARK

■ GATE CHARGE MINIMIZED

DS

DSS

500 V
500 V
500 V
500 V

(on) = 1.3Ω

R

DS(on)

<1.5Ω
<1.5Ω
<1.5Ω
<1.5Ω

I

D

5.5A

5.5A

5.5A

5.5A

DESCRIPTION

The PowerMESH
generation of MESH OV ERLAY

™II is the evolution of the first

™. T he layout re-

finements introduced greatly improv e the Ron*area
figure of merit while keeping the device at the lead­ing edge for what concerns swithing s peed, gate
charge and ruggedness.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES

3

1

TO-220

D2PAK

3

2

1

TO-220FP

I2PAK

INTERNAL SCHEM ATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP5NC50

STB5NC50/-1

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ±30 V
Drain Current (continuos) at TC= 25°C
Drain Current (continuos) at TC= 100°C

()

Drain Current (pulsed) 22 22 A
Total Dissipation at TC= 25°C

5.5 5.5(*) A

3.5 3.5(*) A

100 35 W

I

V

DM

P

V

DGR

V

I
I

TOT

DS

GS

D
D

Derating Factor 0.8 0.28 W/°C

dv/dt(1) Peak Diode Recovery voltage slope 3.5 V/ns

V

ISO

T

T

stg

(•)Pulse width limited by safe operating area

≤5.5A, di/dt ≤100A/µs, VDD≤ V

(1)I

SD

Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature

j

Storage Temperature

(*)Limited only by maximum temperature allowed

(BR)DSS,Tj≤TJMAX.

-55 to 175

-65 to 175

STP5NC50FP

500 V
500 V

°C
°C

1/12December 2002

STP5NC50 - ST P5NC 50FP - STB5N C50 - STB5NC50-1

THERMAL DATA

TO-220

2

D

PAK

2

PAK

I

Rthj-case Thermal Resistance Junction-case Max 1.25 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

Maximum Lead Temperature For Soldering Purpose 300 °C

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID=IAR,VDD=50V)

j

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHE RWIS E SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

=0)

=0)

ID= 250µA, VGS= 0 500 V

V

= Max Rating

DS

= Max Rating, TC= 125 °C

V

DS

V

= ±30V ±100 nA

GS

TO-220FP

5.5 A

280 mJ

1µA

50 µA

(1)

ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

DS=VGS,ID

VGS=10V,ID=2A

= 250µA

234V

1.3 1.5 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance VDS>I

Input Capacitance
Output Capacitance 80 pF
Reverse Transfer

Capacitance

D(on)xRDS(on)max,

ID= 2.5A

V

=25V,f=1MHz,VGS=0

DS

4S

480 pF

11.5 pF

2/12

STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1

ELECTRICAL CHARACTERISTICS

(CONTINUED)
SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

t

r

Q

Q

gs

Q

gd

Turn-on Delay Time
Rise Time

Total Gate Charge

g

Gate-Source Charge 3 nC
Gate-Drain Charge 9 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t
t

f

c

Off-voltage Rise Time
Fall Time 14 ns
Cross-over Time 20 ns

SOURCE DR AIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

Note: 1. Pulsed:Pulseduration=300µs,dutycycle1.5%.

2. Pulse width limited by safeoperating area.

Source-drain Current 5.5 A

(2)

Source-drain Current (pulsed) 22 A

(1)

Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 1.6 µC
Reverse Recovery Current 9 A

=250V,ID= 2.5A

DD

R

= 4.7Ω VGS=10V

G

(see test circuit, Figure 3)
V

=400V,ID= 5.5A,

DD

=10V

V

GS

V

= 400V, ID= 5.5A,

DD

RG=4.7Ω, VGS= 10V
(see test circuit, Figure 5)

ISD= 5.5A, VGS=0
I

= 5.5A, di/dt = 100A/µs,

SD

VDD=100V,Tj=150°C
(see test circuit, Figure 5)

14 ns
15 ns

17.5 24.5 nC

12 ns

1.6 V

360 ns

Safe Operating Area for TO-220FPSafe Operating Area for TO-220/D2PAK/I2PAK

3/12

STP5NC50 - ST P5NC 50FP - STB5N C50 - STB5NC50-1

Thermal Impedence for TO-220/D2PAK/I2PAK

Output Characteristics

Thermal Impedence for TO-220FP

Transfer Characteristics

Transconductance Static D rain-source On Resistance

4/12