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N - CHANNEL ENHANCEMENT MODE
TYPE V
DSS
STB5NA80 800 V < 2.4 Ω 4.7 A
R
DS(on)
I
D
STB5NA80
POWER MOS TRANSISTOR
PRELIMINARY DATA
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHEDATAAT 100
■ LOW GATE CHARGE
■ VERYHIGH CURRENT CAPABILITY
■ APPLICATIONORIENTED
DS(on)
=1.8 Ω
o
C
CHARACTERIZATION
■ THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGEIN TUBE(SUFFIX ”-1”)
■ SURFACE-MOUNTINGD2PACK (TO-263)
POWERPACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDANDRELAY DRIVERS
■ REGULATORS
■ DC-DC& DC-AC CONVERTERS
■ MOTORCONTROL,AUDIO AMPLIFIERS
■ AUTOMOTIVEENVIRONMENT (INJECTION,
ABS, AIR-BAG,LAMPDRIVERS,Etc.)
3
2
1
I2PAK
TO-262
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
DGR
V
I
DM
P
T
(•) Pulse width limited by safe operating area
March 1996
Drain-source Voltage (VGS= 0) 800 V
DS
Drain- gate Voltage (RGS=20kΩ) 800 V
Gate-source Voltage ± 30 V
GS
I
Drain Current (c ont inuo us) a t Tc=25oC4.7A
D
I
Drain Current (c ont inuo us) a t Tc=100oC3A
D
(•) Drain Current (puls ed) 19 A
Total Dissipat i on at Tc=25oC 125 W
tot
Derat ing Factor 1 W/
Stora ge Temperature -65 to 150
stg
T
Max. Operat ing Junct i on Temperatu re 150
j
o
o
o
C
C
C
1/10
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STB5NA80
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max V alue Uni t
I
AR
E
E
I
AR
Ther mal Resistance Junct ion-case Max
Ther mal Resistance Junct ion-ambient Max
Ther mal Resistance Case-s i nk Typ
Maximum Lead Tempera t ure For Solder ing Purpo se
l
Avalanche Current , Repet it iv e or Not-Repe t it ive
(pulse width limi t ed by T
Single Pu lse Avalanc he E nerg y
AS
(starti ng T
Repetitive Avalanche Energy
AR
=25oC, ID=IAR,VDD=25V)
j
(pulse width limi t ed by T
max, δ <1%)
j
max, δ <1%)
j
Avalanche Current , Repet it iv e or Not-Repe t it ive
=100oC, p ulse wid t h limited by Tjmax, δ <1%)
(T
c
1
62.5
0.5
300
4.7 A
110 mJ
4.5 mJ
3A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µAV
= 0 800 V
GS
Break dow n Voltage
I
I
DSS
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leaka ge
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRatingx0.8 Tc= 125oC
DS
V
= ± 30 V ±100 nA
GS
250
1000µAµA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
R
DS(on)
I
D(on)
Gat e Thre shold Volt age VDS=VGSID=250µA2.533.75V
St at ic Drain-source On
Resistance
VGS=10V ID=2.5A
=10V ID=2.5A Tc= 100oC
V
GS
On State Drain Current VDS>I
D(on)xRDS(on)maxVGS
=10 V 4.7 A
1.8 2.4
4.8
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on ductance
C
C
C
Input Capac it an ce
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=2.5A 2.7 5.2 S
VDS=25V f=1MHz VGS= 0 1250
140
35
1700
190
50
Ω
Ω
pF
pF
pF
2/10
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STB5NA80
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=400V ID=2.5A
=4.7 Ω VGS=10V
R
G
(see test cir cuit, figure 3)
(di/dt)
Tur n-on C urr ent Slope VDD=640V ID=5A
on
R
=47 Ω VGS=10V
G
(see test cir cuit, figure 5)
Q
Q
Q
Tot al Gat e Charge
g
Gate-Source Charge
gs
Gat e- Drain Charge
gd
VDD= 640 ID=5A VGS=10V 55
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage Rise Time
t
Fall T ime
f
Cross-over Time
c
VDD=640V ID=5A
=47Ω VGS=10V
R
G
SOURCE DRAIN DIODE
40
10055135
180 A/ µs
75 nC
8
24
75
25
110
100
35
150
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
4.7
19
(pulsed)
(∗)ForwardOnVoltage ISD=4.7A VGS=0 1.6 V
V
SD
t
Q
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 5 A di/dt = 100 A/µs
=100V Tj=150oC
V
DD
800
15.2
Charge
I
RRM
Reverse Recovery
38
Current
(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area ThermalImpedance
A
A
ns
µC
A
3/10