SGS Thomson Microelectronics STB5NA80 Datasheet

N - CHANNEL ENHANCEMENT MODE

TYPE V

DSS

STB5NA80 800 V < 2.4 Ω 4.7 A

R

DS(on)

I

D

STB5NA80

POWER MOS TRANSISTOR

PRELIMINARY DATA

■ TYPICALR

■ AVALANCHERUGGEDTECHNOLOGY

■ 100% AVALANCHETESTED

■ REPETITIVEAVALANCHEDATAAT 100

■ LOW GATE CHARGE

■ VERYHIGH CURRENT CAPABILITY

■ APPLICATIONORIENTED

DS(on)

=1.8 Ω

o

C

CHARACTERIZATION

■ THROUGH-HOLE I2PAK (TO-262) POWER

PACKAGEIN TUBE(SUFFIX ”-1”)

■ SURFACE-MOUNTINGD2PACK (TO-263)

POWERPACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS

■ HIGH CURRENT, HIGH SPEEDSWITCHING

■ SOLENOIDANDRELAY DRIVERS

■ REGULATORS

■ DC-DC& DC-AC CONVERTERS

■ MOTORCONTROL,AUDIO AMPLIFIERS

■ AUTOMOTIVEENVIRONMENT (INJECTION,

ABS, AIR-BAG,LAMPDRIVERS,Etc.)

3

2

1

I2PAK

TO-262

1

D2PAK TO-263

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symb o l Parame t er Val u e Uni t

V

DGR

V

I

DM

P

T

(•) Pulse width limited by safe operating area

March 1996

Drain-source Voltage (VGS= 0) 800 V

DS

Drain- gate Voltage (RGS=20kΩ) 800 V Gate-source Voltage ± 30 V

GS

I

Drain Current (c ont inuo us) a t Tc=25oC4.7A

D

I

Drain Current (c ont inuo us) a t Tc=100oC3A

D

(•) Drain Current (puls ed) 19 A

Total Dissipat i on at Tc=25oC 125 W

tot

Derat ing Factor 1 W/ Stora ge Temperature -65 to 150

stg

T

Max. Operat ing Junct i on Temperatu re 150

j

o o

o

C C C

1/10

STB5NA80

THERMAL DATA

R

thj-case

R

thj-amb

R

thj-amb

T

AVALANCHE CHARACTERISTICS

Symb o l Para met er Max V alue Uni t

I

AR

E

I

AR

Ther mal Resistance Junct ion-case Max Ther mal Resistance Junct ion-ambient Max Ther mal Resistance Case-s i nk Typ Maximum Lead Tempera t ure For Solder ing Purpo se

l

Avalanche Current , Repet it iv e or Not-Repe t it ive (pulse width limi t ed by T

Single Pu lse Avalanc he E nerg y

AS

(starti ng T Repetitive Avalanche Energy

AR

=25oC, ID=IAR,VDD=25V)

j

(pulse width limi t ed by T

max, δ <1%)

j

max, δ <1%)

j

Avalanche Current , Repet it iv e or Not-Repe t it ive

=100oC, p ulse wid t h limited by Tjmax, δ <1%)

(T

c

1

62.5

0.5

300

4.7 A

110 mJ

4.5 mJ

3A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID= 250 µAV

= 0 800 V

GS

Break dow n Voltage

I

DSS

GSS

Zero Gate Voltage Drain Current (V

GS

Gat e- bod y Leaka ge Current (V

DS

=0)

=MaxRating

V

DS

V

=MaxRatingx0.8 Tc= 125oC

DS

V

= ± 30 V ±100 nA

GS

250

1000µAµA

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

GS(th )

R

DS(on)

I

D(on)

Gat e Thre shold Volt age VDS=VGSID=250µA2.533.75V St at ic Drain-source On

Resistance

VGS=10V ID=2.5A

=10V ID=2.5A Tc= 100oC

V

GS

On State Drain Current VDS>I

D(on)xRDS(on)maxVGS

=10 V 4.7 A

1.8 2.4

4.8

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on ductance

C

Input Capac it an ce

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=2.5A 2.7 5.2 S

VDS=25V f=1MHz VGS= 0 1250

140

35

1700

190

50

Ω Ω

pF pF pF

2/10

STB5NA80

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time Rise Time

VDD=400V ID=2.5A

=4.7 Ω VGS=10V

R

G

(see test cir cuit, figure 3)

(di/dt)

Tur n-on C urr ent Slope VDD=640V ID=5A

on

R

=47 Ω VGS=10V

G

(see test cir cuit, figure 5)

Q

Tot al Gat e Charge

g

Gate-Source Charge

gs

Gat e- Drain Charge

gd

VDD= 640 ID=5A VGS=10V 55

SWITCHINGOFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage Rise Time

t

Fall T ime

f

Cross-over Time

c

VDD=640V ID=5A

=47Ω VGS=10V

R

G

SOURCE DRAIN DIODE

40

10055135

180 A/ µs

75 nC

8

24

75 25

110

100

35

150

ns ns

nC nC

ns ns ns

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

4.7 19

(pulsed)

(∗)ForwardOnVoltage ISD=4.7A VGS=0 1.6 V

V

SD

t

Q

Reverse Recovery

rr

Time Reverse Recovery

rr

ISD= 5 A di/dt = 100 A/µs

=100V Tj=150oC

V

DD

800

15.2

Charge

I

RRM

Reverse Recovery

38

Current

(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 % (•) Pulse width limited by safe operating area

Safe Operating Area ThermalImpedance

A A

ns

µC

A

3/10