SGS Thomson Microelectronics STB55NE06L Datasheet
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZE " POWER MOSFET
TYPE V
DSS
STB55NE06L 60 V < 0.022 Ω 55A
■ TYPICAL R
■ EXCEPT ION AL dv/dt CAP AB ILI T Y
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100
■ APPLI CATION ORIENT ED
DS(on)
= 0.018 Ω
CHARACTERIZATION
■ FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a
remarkable manufacturing reproducibilit y.
o
R
C
DS(on)
I
D
STB55NE06L
PRELIMINARY DATA
3
1
D2PAK
TO-263
(suffix "T4")
INTER NAL SCH E M ATI C DIAG RA M
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SOLENOID AND RELAY DRIVER S
■ MOTOR CONT RO L, AUDIO AM PLIFI ER S
■ DC-DC & DC-AC CONVERT E RS
■ AUTOMO TIV E ENV IRO NME NT (INJ ECT IO N,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt Peak Diode Recovery voltage slope 7 V/ns
T
(•) Pulse width limited by safe operating area (1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V
March 1998
Drain-source Voltage (VGS = 0) 60 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 15 V
GS
I
Drain Current (continuous) at Tc = 25 oC55A
D
I
Drain Current (continuous) at Tc = 100 oC39A
D
60 V
(•) Drain Current (pulsed) 220 A
Total Dissipation at Tc = 25 oC130W
tot
Derating Factor 0.86 W/oC
Storage Temperature -65 to 175
stg
T
Max. Operating Junction Temperature 175
j
, Tj ≤ T
(BR)DSS
JMAX
o
C
o
C
1/5
STB55NE06L
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-si n k
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x, δ < 1%)
j
DD
= 15 V)
1.15
62.5
0.5
300
55 A
250 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
60 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc =125 oC
DS
V
= ± 15 V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
1 1.7 2.5 V
Voltage
R
DS(on)
I
D(on)
Static Drain-source On
Resistance
VGS = 5 V ID = 27.5 A
V
= 10 V ID = 27.5 A
GS
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
0.022
0.019
55 A
0.028
0.022
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID =27.5 A 20 30 S
= 0 2800
GS
375
100
3750
500
140
µA
µA
Ω
pF
pF
pF
2/5
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