SGS Thomson Microelectronics STB55NE06 Datasheet
STB55NE06
N - CHANNEL ENHANCEMENT MODE
” SINGLEFEATURE SIZE ” POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
STB55NE06 60 V < 0.022 Ω 55 A
■ TYPICALR
■ EXCEPTIONALdv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ LOW GATE CHARGE 100
■ HIGH dv/dt CAPABILITY
■ APPLICATIONORIENTED
DS(on)
=0.019 Ω
o
C
CHARACTERIZATION
■ FOR THROUGH-HOLE VERSION CONTACT
SALESOFFICE
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalance characteristics and
less critical alignment steps therefore a remarkable manufacturingreproducibility.
APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC& DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Value Uni t
V
V
V
I
DM
P
dv/ dt Peak Diod e Rec ov ery voltage slop e 7 V/ns
T
(•) Pulse width limitedby safe operating area (1)ISD≤ 55 A,di/dt ≤ 300 A/µs, VDD≤ V
December 1997
Drain-s ource Voltage (VGS=0) 60 V
DS
Drain- gate Volt age (RGS=20kΩ)
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (co nt inu ous) at Tc=25oC55A
D
I
Drain Current (co nt inu ous) at Tc=100oC39A
D
60 V
(•) Drain Current (puls ed) 220 A
Tot al Dissipa t ion at Tc=25oC 130 W
tot
Derat ing Fact or 0.96 W/
Storage Temperature -65 t o 175
stg
T
Max. O per ating Junction Tem perat u re 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
STB55NE06
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max Value Uni t
I
AR
E
Ther mal Resistance Ju nc t io n- case Max
Ther mal Resistance Ju nc t io n- ambient Max
Ther mal Resistance Ca s e-sink Typ
Maximum Lead Tem p er at u r e Fo r Soldering Purpose
l
Avalanche Curr ent, Repetit iv e or Not-Repetit ive
(pulse width limi t ed by T
Single Pulse Aval anche Energ y
AS
(starti ng T
=25oC, ID=IAR,VDD=25V)
j
max, δ <1%)
j
1.15
62.5
0.5
300
55 A
200 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
= 250 µAVGS=0
I
D
60 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Le akage
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125oC
DS
= ± 20 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
R
DS(on)
Gat e Thr e shold Voltage
St at ic D rain-source O n
V
DS=VGSID
=250µA
VGS= 10V ID= 27. 5 A 0.019 0.022 Ω
234V
Resistance
I
D(on)
On State Drain Curr ent VDS>I
D(on)xRDS(on)max
55 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on ductance
C
C
C
Input Capacitanc e
iss
Out put Ca pac itance
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=27.5 A 25 35 S
VDS=25V f=1MHz VGS= 0 3050
380
100
4000
500
130
µA
µA
pF
pF
pF
2/8
STB55NE06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
Q
Q
Q
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
r
Turn-on Time
Rise T ime
VDD=30V ID=27.5A
R
=4.7 W VGS=10V
G
30
12040160
(see test circuit, f igure 3)
Tot al Gate Char ge
g
Gate-Source Charge
gs
Gat e- Drain Charge
gd
Off -voltage Rise Tim e
t
Fall T ime
f
Cross-over Time
c
Source-drain Current
(•)
Source-drain Current
VDD=48V ID=55A VGS=10V 80
13
25
VDD=48V ID=55A
=4.7 Ω VGS=10V
R
G
(see test circuit, f igure 5)
20
50
75
105 nC
30
70
100
55
220
(pulsed)
(∗)ForwardOnVoltage ISD=60A VGS=0 1.5 V
Reverse Recov ery
rr
Time
Reverse Recov ery
rr
= 55 A di/dt = 100 A/µs
I
SD
=30V Tj= 150oC
V
DD
(see test circuit, f igure 5)
110
430
Charge
Reverse Recov ery
7.5
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Area ThermalImpedance
3/8
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