SGS Thomson Microelectronics STB50NH02L Datasheet
STB50NH02L
N-CHANNEL 24V - 0.011 Ω - 50A D²PAK
STripFET™ III POWER MOSFET
TYPE
V
DSS
STB50NH02L 24 V < 0.0135
■ TYPICAL R
■ TYPICAL R
■ R
DS(ON)
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ LOW THRESHOLD DEVICE
■ SURFACE-MOUNTING D
(on) = 0.011 Ω @ 10 V
DS
(on) = 0.015 Ω @ 5 V
DS
* Qg INDUSTRY’s BENCHMARK
R
DS(on)
Ω
2
PAK (TO-263)
I
D
50 A
POWER PACKAG E IN TU BE (NO SU FFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
The STB50NH02L utilizes the latest advanced design
rules of ST’s proprieta ry STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
applications where high efficiency is to be achieved.
APPLICATIONS
■ SPECIFICALL Y D ESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
3
1
D²PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
spike(1)
V
V
V
I
DM
P
E
AS
T
DS
DGR
GS
I
D
I
D
(2)
tot
stg
T
j
Drain-source Voltage Rating 30 V
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
24 V
24 V
Gate- source Voltage ± 20 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
50 A
36 A
Drain Current (pulsed) 200 A
Total Dissipation at TC = 25°C
60 W
Derating Factor 0.4 W/°C
(3)
Single Pulse Avalanche Energy 200 mJ
Storage Temperature
Max. Operating Junction Temperature
-55 to 175 °C
1/11September 2003
STB50NH02L
THERMA L D ATA
Rthj-case
Rthj-amb
T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
l
Max
Max
2.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 25 mA, VGS = 0
V
(BR)DSS
Drain-source
I
D
24 V
Breakdown Voltage
= 20 V
V
DS
V
= 20 V TC = 125°C
DS
V
= ± 20 V
GS
1
10
±100 nA
ON
(4)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS I
DS
= 10 V ID = 25 A
V
GS
V
= 5 V ID = 12.5 A
GS
= 250 µA
D
1 1.8 V
0.011
0.015
0.0135
0.025
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(4)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 10 V ID= 19 A
DS
= 15V f = 1 MHz VGS = 0
V
DS
19 S
1070
305
45
µA
µA
Ω
Ω
pF
pF
pF
2/11
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias=0
Test Signal Level =20 mV
1
Ω
Open Drain
STB50NH02L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 10 V ID =25 A
t
d(on)
t
Turn-on Delay Time
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 4.5 V
G
(Resistive Load, Figure 3)
Q
Q
gs
Q
gd
Q
oss
Total Gate Charge
g
Gate-Source Charge
Gate-Drain Charge
(5)
Output Charge
≤ V
0.44
I
=50 A VGS=10 V
D
V
DS
≤10 V
DD
= 16 V VGS= 0 V
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 10 V ID = 25 A
t
d(off)
t
Turn-off Delay Time
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 10 V
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
7
62
18
24 nC
4
2.5
6.5 nC
25
12 16
ns
ns
nC
nC
ns
ns
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(1)
Garanted wh en external Rg=4.7 Ω and tf < t
(2)
Pulse width limited by safe operating area
3
(
) Starting Tj = 25 oC, ID = 25A, VDD = 18V
Source-drain Current
Source-drain Current (pulsed)
(4)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
fmax
I
= 25 A VGS = 0
SD
= 50 A di/dt = 100A/µs
I
SD
V
= 18 V Tj = 150°C
DD
(see test circuit, Figure 5)
.
(4)
(5)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
Q
oss = Coss
*∆ V
in , Coss = Cgd + Cds .
Safe Operating Area Thermal Impedance
200
1.3 V
27
22
1.6
See Appendix A
50
A
A
ns
nC
A
3/11
STB50NH02L
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
4/11
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