SGS Thomson Microelectronics STB50NE10L Datasheet
®
N - CHANNEL 100V - 0.020Ω - 50A - D2PAK
TYPE V
DSS
STB50NE10L 100 V <0.025 Ω 50 A
■ TYPICAL R
■ EXCEPT ION AL dv/dt CAP AB ILI T Y
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE AT 100
■ APPLICATION ORIENTED
DS(on)
= 0.020 Ω
CHARACTERIZATION
■ FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTIO N
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
R
DS(on)
I
D
o
C
STB50NE10L
STripFET POWER MOSFET
PRELIMINARY DATA
3
1
D2PAK
TO-263
(suffix "T4")
INTER NAL SCH E M ATI C DIAG RA M
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SOLENOID AND RELAY DRIVER S
■ MOTOR CONT RO L, AUDIO AM PLIFI ER S
■ DC-DC & DC-AC CONVERT E RS
■ AUTOMOTIVE ENVIRONMENT
ABSOL UT E MAXI M UM RAT IN GS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt (1) Peak Diode Recovery voltage slope 6 V/ns
T
(•) Pulse width limited by safe operating area (1) ISD ≤ 50 A, di/dt ≤ 300 A/µs, VDD ≤ V
Drain-source Voltage (VGS = 0) 100 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC50A
D
I
Drain Current (continuous) at Tc = 100 oC35A
D
100 V
(•) Drain Current (pulsed) 200 A
Total Dissipation at Tc = 25 oC150W
tot
Derating Factor 1 W/oC
Storage Temperature -65 to 175
stg
T
Max. Operating Junction Temperature 175
j
, Tj ≤ T
(BR)DSS
JMAX
o
C
o
C
June 1998
1/5
STB50NE10L
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-si n k
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x)
j
DD
= 50 V)
1
62.5
0.5
300
50 A
300 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
100 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125
DS
o
C
V
= ± 20 V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
1 1.7 2.5 V
Voltage
R
DS(on)
I
D(on)
Static Drain-source On
Resistance
VGS = 10V ID = 25 A
V
= 5 V ID = 25 A
GS
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
0.020
00.24
50 A
0.025
0.030mΩµΩ
DYNAMIC
µA
µA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
VDS > I
D(on)
x R
DS(on)max
ID =25 A 20 35 S
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
V
= 25 V f = 1 MHz V
DS
= 0 TBD TBD pF
GS
Capacitance
2/5
pF
pF
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