SGS Thomson Microelectronics STB50NE08 Datasheet
STB50NE08
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE ” POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
STB50NE08 80 V <0.024 Ω 50 A
■ TYPICALR
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ LOW GATE CHARGE AT100
■ APPLICATIONORIENTED
DS(on)
=0.020 Ω
o
C
CHARACTERIZATION
■ FOR THROUGH-HOLE VERSIONCONTACT
SALESOFFICE
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a
remarkablemanufacturingreproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDANDRELAY DRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BAG,LAMPDRIVERS,Etc.)
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
V
V
V
I
DM
P
dv/dt (
T
(•) Pulsewidth limited by safe operating area (1)ISD≤ 50 A,di/dt ≤ 300A/µs, VDD≤ V
March 1998
Drain-source Voltage (VGS=0) 80 V
DS
Drain- gate Voltage ( RGS=20kΩ)
DGR
Gat e- sourc e Volt age ± 20 V
GS
I
Drain Current (c on t in uous) at Tc=25oC50A
D
I
Drain Current (c on t in uous) at Tc=100oC35A
D
80 V
(•) Drain Current (pul sed) 200 A
Tot al Dissip at i on at Tc=25oC150W
tot
Derat in g F actor 1 W/
1) Pea k Diode Recov ery vo lt age sl ope 6 V/ns
Sto rage Tempe r ature -65 to 175
stg
T
Max. Oper at in g Junc t io n Temperatu r e 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
STB50NE08
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Valu e Uni t
I
AR
E
Ther mal Resist an c e Junction-ca s e Max
Ther mal Resist an c e Junction-am bient Max
Ther mal Resist an c e Case-si nk Ty p
Maximum Lead Tem peratu re Fo r S old eri ng P ur p os e
l
Avalanch e Current, Rep etit ive or Not - Re petit ive
(pulse w idth limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
1
62.5
0.5
300
50 A
300 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ . Max. Unit
V
(BR)DSS
Drain-sou rc e
=250µAVGS=0
I
D
80 V
Breakdown V oltage
I
DSS
I
GSS
Zer o Gate Vo lt age
Drain Cur re nt (V
GS
Gat e-body Leaka ge
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125
DS
o
C
= ± 20 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
234V
Voltage
R
DS(on)
Stati c Drain-so urce On
VGS=10V ID= 25 A 0.020 0.024 mΩ
Resistance
I
D(on)
On Stat e Drain Cu rr e nt VDS>I
D(on)xRDS(on)max
50 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr anscond uctance
C
C
C
Input Capaci t ance
iss
Out put C apa c itanc e
oss
Reverse Transfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=25 A 20 35 S
VDS=25V f=1MHz VGS= 0 3850
480
105
5100
650
140
µA
µA
pF
pF
pF
2/8
STB50NE08
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
t
d(on)
Turn-on Time
r
Rise Tim e
t
VDD=40V ID=25A
=4.7 Ω VGS=10V
R
G
37
95
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e-Sou r ce Charge
gs
Gate-Drain Charge
gd
VDD=64V ID=50A VGS=10V 85
19
28
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Of f - voltag e Rise T im e
Fall Time
f
Cross-over Time
c
VDD=64V ID=50A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
12
30
50
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulseduration =300 µs, duty cycle1.5 %
(•) Pulse widthlimited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) For ward On Voltage ISD=50A VGS=0 1.5 V
Reverse Recov er y
rr
Time
Reverse Recov er y
rr
= 50 A di/dt = 10 0 A/µs
I
SD
=30V Tj=150oC
V
DD
(see test circuit, figure 5)
100
400
Charge
Reverse Recov er y
8
Current
50
130
110 nC
17
40
68
50
200
ns
ns
nC
nC
ns
ns
ns
A
A
ns
nC
A
Safe Operating Area ThermalImpedance
3/8
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