SGS Thomson Microelectronics STB4NC60 Datasheet
STB4NC60
N-CHANNEL 600V - 1.8Ω - 4. 2A D2PAK
PowerMesh™II MOSFET
TYPE V
DSS
R
DS(on)
I
D
STB4NC60 600V < 2.2Ω 4.2A
■ TYPICAL R
■ EXTREMELY HIGH dv /d t C APABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
(on) = 1.8Ω
DS
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
™II is the evolution of the first
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea ding edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLI ES ( SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt(1) Peak Diode Recovery voltage slope 3.5 V/ns
T
stg
T
(•)Pu l se width limi te d by safe oper ating area
≤4.2A, di/dt ≤300A/µs, VDD ≤ V
(1)I
SD
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
600 V
600 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
4.2 A
2.6 A
(●) Drain Current (pulsed) 16.8 A
Total Dissipation at TC = 25°C
100 W
Derating Factor 0.8 W/°C
Storage Temperature
Max. Operating Junction Temperature
j
(BR)DSS
, Tj ≤ T
JMAX.
–65 to 150 °C
1/9October 2001
STB4NC60
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 1.25 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 50 V)
j
ID = 250 µA, VGS = 0 600 V
4.2 A
250 mJ
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±30V ±100 nA
GS
1µA
50 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 1.5 A
234V
1.8 2.2 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
I
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 72 pF
Reverse Transfer
Capacitance
D
V
=2A
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
3.7 S
475 pF
10 pF
2/9
STB4NC60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
gs
gd
Turn-on Delay Time
Rise Time 14 ns
Total Gate Charge
g
Gate-Source Charge 2.5 nC
Gate-Drain Charge 9 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 19 ns
Cross-over Time 24 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 4.2 A
(2)
Source-drain Current (pulsed) 16.8 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 2.7 µC
Reverse Recovery Current 9 A
= 300V, ID = 2A
DD
RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)
V
= 480V, ID = 4A,
DD
VGS = 10V
V
= 480V, ID = 4.2A,
DD
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
ISD = 4.2A, VGS = 0
I
= 4 A, di/dt = 100A/µs,
SD
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
14 ns
16.5 23.1 nC
15 ns
1.6 V
600 ns
Safe Operating Area Ther m al Impeda n c e
3/9
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