SGS Thomson Microelectronics STP45NF06L, STB45NF06L Datasheet
STP45NF06L
STB45NF06L
N-CHANNEL 60V - 0.022Ω -38ATO-220/D2PAK
STripFET™ II POWER MOSFET
TYPE V
STP45NF06L
STB45NF06L
■ TYPICAL R
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOGIC LEVEL G ATE DRIVE
DS
DSS
60 V
60 V
(on) = 0.022Ω
R
DS(on)
< 0.028Ω
< 0.028Ω
I
D
38 A
38 A
DESCRIPTION
This Power Mosfet is the latest develo pment of
STMicroelectronics unique “Single Feature
™” strip-based process. The resulting t r an-
Size
sistor show s extremely high packing density for
low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CON TROL, AUDIO AMPLIFIERS
■ DC-DC & DC-A C CONVERTERS
3
1
D2PAK
TO-220
2
1
INTERNAL SCHE M ATIC DIAGRAM
3
ABSOLUTE MAX IMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 7 V/ns
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
60 V
60 V
Gate- source Voltage ±16 V
Drain Current (continuos) at TC= 25°C
Drain Current (continuos) at TC= 100°C
()
Drain Current (pulsed) 152 A
Total Dissipation at TC= 25°C
38 A
26 A
80 W
Derating Factor 0.53 W/°C
Storage Temperature
Max. Operating Junction Temperature
(1) ISD≤38A, di/dt ≤300A/µs, VDD≤ V
–55 to 175 °C
(BR)DSS,Tj≤TJMAX.
1/10September 2002
STP45NF06L - S TB45N F 06L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.87 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTE RISTICS (TCASE = 25 °C UNLE S S OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID=IAR,VDD=50V)
j
ID= 250 µA, VGS= 0 60 V
38 A
135 mJ
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ±16V ±100 nA
GS
1µA
10 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
DS=VGS,ID
=5V,ID=19A
V
GS
=10V,ID=19A
V
GS
= 250µA
1 1.7 2.5 V
0.024 0.03 Ω
0.022 0.028
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID=19 A 24 S
g
fs
V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 217 pF
Reverse Transfer
Capacitance
=25V,f=1MHz,VGS=0
DS
1600 pF
62 pF
2/10
STP45NF06L - S TB45NF06L
ELECTRICAL CHARACTE RISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 105 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
d(off)
t
f
t
f
t
c
Turn-off-Delay Time
Fall Time
Off-voltage Rise Time
Fall Time (see test circuit, Figure 5) 55 ns
Cross-over Time 85 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 38 A
(2)
Source-drain Current (pulsed) 152 A
(1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
=30V,ID=19A
DD
= 4.7Ω VGS=10V
R
G
(see test circuit, Figure 3)
=48V,ID= 38A,
V
DD
V
=5V
GS
= 30V, ID=19A,
V
DD
RG=4.7Ω, VGS= 10V
(see test circuit, Figure 3)
Vclamp =48V, I
R
=4.7Ω, VGS= 10V
G
D
=38A
ISD= 38A, VGS=0
= 38A, di/dt = 100A/µs,
I
SD
V
=100V,Tj=150°C
DD
(see test circuit, Figure 5)
30 ns
23
31
7
10
65
25
50 ns
1.5 V
70
110
4
nC
nC
nC
ns
ns
ns
nC
A
Thermal ImpedenceSafe Operating Area
3/10
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