SGS Thomson Microelectronics STB40NF10L Datasheet
STB40NF10L
N-CHANNEL 100V - 0.028Ω - 40A D2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE V
DSS
STB40NF10L 100 V < 0.033
■ TYPICAL R
■ EXCEPTIONA L dv/d t CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED
(on) = 0.028Ω
DS
R
DS(on)
I
D
Ω
40 A
CHARACTERIZATION
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated D C-DC
converters for T el ecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL
■ AUTOMOTIVE
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
E
AS
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
100 V
100 V
Gate- source Voltage ± 15 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 160 A
Total Dissipation at TC = 25°C
40 A
25 A
150 W
Derating Factor 1 W/°C
(1)
Single Pulse Avalanche Energy 430 mJ
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C
(1) Starting Tj = 25°C, ID = 20A, VDD = 40V
1/9April 2001
STB40NF10L
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Maximum Lead Temperature For Soldering Purpose 300 °C
Drain-source
ID = 250 µA, VGS = 0 100 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 15V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 20 A
VGS = 5V, ID = 20 A
1 1.7 2.5 V
0.028 0.033
0.030 0.036
1µA
10 µA
Ω
Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS = 15V, ID= 20 A 25 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 290 pF
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, VGS = 0
DS
2300 pF
125 pF
2/9
STB40NF10L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 82 ns
Total Gate Charge VDD = 80V, ID =40A,VGS = 5V 46
Gate-Source Charge 12 nC
Gate-Drain Charge 22 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
d(off)
t
f
t
f
t
c
Turn-off-Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cyc l e 1.5 %.
2. Pulse width li mited by safe operating ar ea.
Source-drain Current 40 A
(1)
Source-drain Current (pulsed) 160 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 50 V, ID = 20 A
DD
R
= 4.7Ω VGS = 4.5V
G
(see test circuit, Figure 3)
VDD = 50 V, ID = 20 A,
RG=4.7Ω, V
GS
= 4.5V
(see test circuit, Figure 3)
Vclamp =80V, I
RG=4.7Ω, V
D
GS
= 40 A
= 4.5V
(see test circuit, Figure 3)
ISD = 40 A, VGS = 0
= 40 A, di/dt = 100A/µs,
I
SD
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
25 ns
64
64
24
51
29
53
1.3 V
110
467
8
nC
ns
ns
ns
ns
ns
ns
nC
A
Safe Operating Area Thermal Impeda nce
3/9
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