SGS Thomson Microelectronics STB40NE03L-20 Datasheet
STB40NE03L-20
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE ” POWER MOSFET
TYPE V
■ TYPICALR
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE A 100
■ APPLICATIONORIENTED
DS(on)
DSS
= 0.014Ω
R
DS(on)
I
D
o
C
CHARACTERIZATION
■ FOR THROUGH-HOLE VERSIONCONTACT
SALESOFFICE
DESCRIPTION
This Power MOSFETis the latestdevelopment of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturingreproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGHSPEEDSWITCHING
SOLENOIDAND RELAY DRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-AC CONVERTERSIN HIGH
PERFORMANCEVRMs
■ AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc.)
ABSOLUTE MAXIMUM RATINGS
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Symbol Parameter Value Unit
V
V
V
I
DM
P
Drain-sourc e Voltag e (VGS=0) 30 V
DS
Drain- gat e Voltag e (RGS=20kΩ)
DGR
Gate- source Voltage ± 15 V
GS
I
Drain Cur re n t (cont inuous) at Tc=25oC40A
D
I
Drain Cur re n t (cont inuous) at Tc=100oC28A
D
30 V
(•) Drain Current (pulsed) 160 A
Total Dissipation at Tc=25oC80W
tot
Derating Fa ctor 0.53 W/
dv/ dt(
1) Peak Diode Recov ery voltage slope 7 V/ns
T
(•) Pulsewidth limited bysafe operating area (1)ISD≤ 40 A,di/dt ≤ 300 A/µs, VDD≤ V
St orage Temper at ure -65 to 175
stg
T
Max. Operating Ju nction Temperature 175
j
(BR)DSS,Tj≤TJMAX
November 1997
o
C
o
C
o
C
1/8
STB40NE03L-20
THERMAL DATA
R
thj-case
R
thj- amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Valu e Uni t
I
AR
E
Ther mal Resist ance Junctio n- ca s e Max
Ther mal Resist ance Junctio n- ambient Max
Ther mal Resist ance Case-si nk Ty p
Maximum Lead T emperat ure For Soldering Purpos e
l
Avalanche Cur re nt , Rep et it i v e or Not-Re petitiv e
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=15V)
j
max, δ <1%)
j
1.88
62.5
0.5
300
40 A
200 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
30 V
Breakdown V oltage
I
I
DSS
GSS
Zer o Gate V o lt age
Drain Cur re nt (V
GS
Gat e-body Leaka ge
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125
DS
o
C
= ± 15 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
11.82.5V
Voltage
R
DS(on)
I
D(on)
Stati c D rain-source On
Resistance
VGS=10V ID=20A
=5V ID=20A
V
GS
On State Drain Curre nt VDS>I
D(on)xRDS(on)max
0.014 0. 0 2
0.023ΩΩ
40 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconduc tanc e
C
C
C
Input Capaci t ance
iss
Out put C apacit ance
oss
Reverse Transfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=20A 15 20 S
VDS=25V f=1MHz VGS= 0 1850
450
160
2400
590
210
µA
µA
pF
pF
pF
2/8
STB40NE03L-20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Time
Rise Tim e
t
r
Total Gate Charge
g
Gat e-Sou rc e Charge
gs
Gate-Drain Charge
gd
VDD=15V ID=20A
=4.7 Ω VGS=5V
R
G
VDD=24V ID=40A VGS=5V 29
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
r(Voff)
t
Of f - voltag e Rise Time
t
Fall Time
f
Cross-ov er Time
c
VDD=24V ID=40A
=4.7 Ω VGS=5V
R
G
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) Forwar d On Vo lt age ISD=40A VGS=0 1.5 V
Reverse Recov ery
rr
Time
Reverse Recov ery
rr
= 40 A di/dt = 100 A /µs
I
SD
=20V Tj=150oC
V
DD
Charge
Reverse Recov ery
Current
25
16033210
38 nC
12
14
25
120
155
33
160
210
40
160
50
0.9
3.5
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Area ThermalImpedance
3/8
Loading...