SGS Thomson Microelectronics STP3NC90ZFP, STP3NC90Z, STB3NC90Z-1 Datasheet
STP3NC90Z - STP3NC90ZFP
STB3NC90Z-1
N-CH A NNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK
Zener-Protected PowerMESH™III MOSFET
TYPE V
DSS
STP3NC90Z/FP 900V < 3.5
STB3NC90Z-1 900V < 3.5
■ TYPICAL R
■ EXTREMELY HIGH d v/dt AND CAPA BILITY GATE
(on) = 3.2Ω
DS
R
DS(on)
I
D
Ω
Ω
3.5 A
3.5 A
TO - SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW GATE INPUT RESISTANCE
■ GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as request ed b y a l arge variety
of single-switch applications.
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
TO-220
3
2
1
I2PAK
(Tabless TO-220)
TO-220FP
1
3
2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP(B)3NC90Z(-1) STP3NC90ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
I
GS
V
ESD(G-S)
dv/dt Peak Diode Recovery voltage slope 3 V/ns
V
ISO
T
stg
T
j
(•)Pu l se width limited by safe operati ng area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
900 V
900 V
Gate- source Voltage ± 25 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 14 14 A
Total Dissipation at TC = 25°C
3.5 3.5(*) A
2.2 2.2(*) A
100 35 W
Derating Factor 0.8 0.28 W/°C
Gate-source Current (*) ±50 mA
Gate source ESD(HBM-C=100pF, R=15K
Ω)
2.5 KV
Insulation Withstand Voltage (DC) -- 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1)ISD ≤3.5A, di/dt ≤100A/µs, VDD ≤ V
(*).Limited only by maximum temperature allowed
(BR)DSS
, Tj ≤ T
JMAX
1/11January 2001
STP3NC90Z/FP/STB3NC90Z-1
THERMA L D ATA
TO-220 / I2PAK TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.25 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
∆
BV
DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 50 V)
j
ID = 250 µA, VGS = 0 900 V
3.5 A
220 mJ
Breakdown Voltage
/∆TJBreakdown Voltage Temp.
ID = 1 mA, VGS = 0 1 V/°C
Coefficient
= Max Rating
V
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±20V ±10 µA
GS
1µA
50 µA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250µA
DS
VGS = 10V, ID = 1.75 A
345V
3.2 3.5
Resistance
I
D(on)
On State Drain Current VDS > I
V
=10V
GS
D(on)
x R
DS(on)max,
3.5 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 78 pF
Reverse Transfer
Capacitance
I
= 1.75A
D
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
3S
1250 pF
7pF
Ω
2/11
STP3NC90Z/FP/STB3NC90Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge 8 nC
Gate-Drain Charge 10 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 10 ns
Cross-over Time 18 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Source-drain Current 3.5 A
(2)
Source-drain Current (pulsed) 14 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 4450 µC
Reverse Recovery Current 13 A
= 450 V, ID = 1.5 A
V
DD
RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)
V
= 720V, ID = 3A,
DD
VGS = 10V
V
= 720V, ID = 3 A,
DD
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
ISD = 3 A, VGS = 0
I
= 3 A, di/dt = 100A/µs,
SD
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
28 ns
14 ns
27 38 nC
16 ns
1.6 V
712 ns
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 25 V
Voltage
α
T Voltage Thermal Coefficient T=25°C Note(3) 1.3
I
Rz Dynamic Resistance
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.
2. Pulse width li mited by safe operating area .
3.∆V
= αT (25°-T) BV
BV
GSO
(25°)
= 50 mA
D
90
10
-4
/°C
Ω
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
3/11
STP3NC90Z/FP/STB3NC90Z-1
Safe Operating Area For TO-220FPSafe Operating Area For TO-220 / I²PAK
Thermal Impedance For TO-220 / I²PAK
Output Characteristics
Thermal Impedance For TO-220FP
Transfer Characteristics
4/11
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