SGS Thomson Microelectronics STB3N60-1 Datasheet
STB3NA60-1
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
■ TYPICALR
DS(on)
=0.7 Ω
■ AVALANCHERUGGEDTECHNOLOGY
■ ±
30V GATETO SOURCE VOLTAGERATING
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHEDATAAT 100
o
C
■ LOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ DC-DC& DC-AC CONVERTERS
■ MOTORCONTROL,AUDIO AMPLIFIERS
■ AUTOMOTIVEENVIRONMENT (INJECTION,
ABS, AIR-BAG,LAMPDRIVERS,Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
DS
Drain-source Voltage (VGS= 0) 600 V
V
DGR
Drain- gate Voltage (RGS=20kΩ) 600 V
V
GS
Gate-source Voltage ± 30 V
I
D
Drain Current (c ont inuo us) a t Tc=25oC2.9A
I
D
Drain Current (c ont inuo us) a t Tc=100oC1.8A
I
DM
(•) Drain Current (puls ed) 11.6 A
P
tot
Total Dissipat i on at Tc=25oC80W
Derat ing Factor 0.64 W/
o
C
T
stg
Stora ge Temperature -65 to 150
o
C
T
j
Max. Operat ing Junct i on Temperatu re 150
o
C
(•) Pulse width limited by safe operating area
TYPE V
DSS
R
DS(on)
I
D
STB3N A 60-1 600 V < 4 Ω 2.9 A
March 1996
1
2
3
I2PAK
TO-262
1/9
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
l
Ther mal Resistance Junct ion-case Max
Ther mal Resistance Junct ion-ambient Max
Ther mal Resistance Case-s i nk Typ
Maximum Lead Tempera t ure For Solder ing Purpo se
1.56
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max V alue Uni t
I
AR
Avalanche Current , Repet it iv e or Not-Repe t it ive
(pulse width limi t ed by T
j
max, δ <1%)
2.9 A
E
AS
Single Pu lse Avalanc he E nerg y
(starti ng T
j
=25oC, ID=IAR,VDD=50V)
42 mJ
E
AR
Repetitive Avalanche Energy
(pulse width limi t ed by T
j
max, δ <1%)
1.6 mJ
I
AR
Avalanche Current , Repet it iv e or Not-Repe t it ive
(T
c
=100oC, p ulse wid t h limited by Tjmax, δ <1%)
1.8 A
ELECTRICAL CHARACTERISTICS (T
case
=25oC unlessotherwise specified)
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Break dow n Voltage
ID= 250 µAV
GS
= 0 600 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
=MaxRating
V
DS
=MaxRatingx0.8 Tc= 125oC
250
1000µAµA
I
GSS
Gat e- bod y Leaka ge
Current (V
DS
=0)
V
GS
= ± 30 V ±100 nA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
Gat e Thre shold Volt age VDS=VGSID=250µA2.2533.75V
R
DS(on)
St at ic Drain-source On
Resistance
VGS=10V ID=1.5A
V
GS
=10V ID=1.5A TC= 100oC
3.3 4
8
Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)maxVGS
=10 V 2.9 A
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansc on ductance
VDS>I
D(on)xRDS(on)maxID
=1.5A 1 2 S
C
iss
C
oss
C
rss
Input Capac it an ce
Out put Capac itance
Reverse Transfer
Capacit a nc e
VDS=25V f=1MHz VGS= 0 380
57
17
500
75
23
pF
pF
pF
STB3NA60-1
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=300V ID=1.5A
R
G
=18 Ω VGS=10V
(see test cir cuit, figure 3)
14
25
20
35
ns
ns
(di/dt)
on
Tur n-on C urr ent Slope VDD=400V ID=3A
R
G
=18 Ω VGS=10V
(see test cir cuit, figure 5)
300 A/ µs
Q
g
Q
gs
Q
gd
Tot al Gat e Charge
Gate-Source Charge
Gat e- Drain Charge
ID=3A VGS=10V
V
DD
= M ax Rating x 0.8
22
6
9
30 nC
nC
nC
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off -voltage Rise Time
Fall T ime
Cross-over Time
VDD=480V ID=3A
R
G
=18Ω VGS=10V
(see test cir cuit, figure 5)
13
24
12
18
34
17
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
2.9
11.6
A
A
V
SD
(∗)ForwardOnVoltage ISD=2.9A VGS=0 1.5 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD= 3 A di/dt = 100 A/µs
V
DD
=100V Tj=150oC
(see test cir cuit, figure 5)
460
5.6
24
ns
µC
A
(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area ThermalImpedance
STB3NA60-1
3/9
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