SGS Thomson Microelectronics STB36NF03L Datasheet
STB36NF03L
N-CHANNEL 30V - 0.015
LOW GATE CHARGE STripFET POWER MOSFET
TYPE V
ST B36NF03L 30 V < 0. 02 Ω 36 A
■ TYPICALR
■ TYPICALQ
■ OPTIMAL R
■ CONDUCTION LOSSESREDUCED
■ SWITCHINGLOSSESREDUCED
DS(on)
g
DSS
= 0.015 Ω
= 18 nC @ 10V
DS(on)xQg
DESCRIPTION
This applicationspecific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size” strip-based process. The resulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performancein termsof both conductionand
switching losses. This is extremely important for
motherboardswhere fast switching and high efficiencyare of paramount importance.
R
DS(on)
TRADE-OFF
I
D
Ω
- 36A D2PAK
PRELIMINARY DATA
3
1
D2PAK
TO-263
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ SPECIFICALLYDESIGNEDAND
OPTIMISEDFOR HIGH EFFICIENCY CPU
CORE DC/DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
T
(•) Pulse width limited by safeoperating area
Dra in- sour c e Volt age ( VGS=0) 30 V
DS
Dra in- gate V ol t age ( RGS=20kΩ)30V
DGR
Gat e-source Voltage
GS
I
Dra in C u rr ent (c ontinuous) at Tc=25oC36A
D
I
Dra in C u rr ent (c ontinuous) at Tc=100oC25A
D
(•) Dra in Current ( p uls ed ) 144 A
Tot al Dis s ipation at Tc=25oC75W
tot
Der ati ng Fac t or 0.5 W/
St orage Tempe rat ure -65 t o 175
stg
T
Max. O perating Junc t ion T emperat ure 175
j
20 V
±
o
C
o
C
o
C
May 2000
1/6
STB36NF03L
THERMAL DATA
R
thj-case
R
thj-amb
T
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Maximum Lead Tem pe ra tur e For Solder ing Purpose
l
2
62.5
300
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n V o lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Cur re nt ( V
GS
Gat e- bod y L eakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Volt age VDS=VGSID= 250 µA1 V
Sta t ic Drain -s ource On
Resistance
On State Drain Current VDS>I
VGS=10V ID=18A
V
=5V ID=9A
GS
D(on)xRDS(on )max
0.015
0.026
0.020
0.035
36 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capac i t ance
iss
Out put Capacitance
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=18 A 20 S
VDS=25V f=1MHz VGS= 0 750
270
60
µA
µ
Ω
Ω
pF
pF
pF
A
2/6
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