SGS Thomson Microelectronics STB36NF02L Datasheet
STB36NF02L
N-CHANNEL 20V - 0.016
Ω
- 36A D2PAK
LOW GATE CHARGE STripFET POWER MOSFET
PRELIMINARY DATA
■ TYPICALR
DS(on)
= 0.016 Ω
■ TYPICALQ
g
= 19 nC @ 10V
■ OPTIMAL R
DS(on)xQg
TRADE-OFF
■ CONDUCTION LOSSESREDUCED
■ SWITCHINGLOSSESREDUCED
DESCRIPTION
This applicationspecific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size” strip-based process. The resulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performancein termsof both conductionand
switching losses. This is extremely important for
motherboardswhere fast switching and high efficiencyare of paramount importance.
APPLICATIONS
■ SPECIFICALLYDESIGNEDAND
OPTIMISEDFOR HIGH EFFICIENCY CPU
CORE DC/DC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
October 1999
1
3
D2PAK
TO-263
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Dra in- sour c e Volt age ( VGS=0) 20 V
V
DGR
Dra in- gate V ol t age ( RGS=20kΩ)20V
V
GS
Gat e-source Voltage
±
20 V
I
D
Dra in C u rr ent (c ontinuous) at Tc=25oC36A
I
D
Dra in C u rr ent (c ontinuous) at Tc=100oC25A
I
DM
(•) Dra in Current ( p uls ed ) 144 A
P
tot
Tot al Dis s ipation at Tc=25oC75W
Der ati ng Fac t or 0.5 W/
o
C
T
stg
St orage Tempe rat ure -65 t o 175
o
C
T
j
Max. O perating Junc t ion T emperat ure 175
o
C
(•) Pulse width limited by safeoperating area
TYPE V
DSS
R
DS(on)
I
D
ST B36NF02L 20 V < 0.021 Ω 36 A
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
1/6
THERMAL DATA
R
thj-case
R
thj-amb
T
l
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Maximum Lead Tem pe ra tur e For Solder ing Purpose
2
62.5
300
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
(T
case
=25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Break dow n V o lt age
ID=250µAVGS=0 20 V
I
DSS
Zero Gate Voltage
Drain Cur re nt ( V
GS
=0)
V
DS
=MaxRating
V
DS
=MaxRating Tc=125oC
1
10
µA
µ
A
I
GSS
Gat e- bod y L eakage
Current (V
DS
=0)
V
GS
= ± 20 V ± 100 nA
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Volt age VDS=VGSID= 250 µA12.5V
R
DS(on)
Sta t ic Drain -s ource On
Resistance
VGS=10V ID=18A
V
GS
=4.5V ID=18A
0.016
0.023
0.021
0.03
Ω
Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on )max
VGS=10V
36 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansc on duc tance
VDS>I
D(on)xRDS(on )maxID
=18 A 20 S
C
iss
C
oss
C
rss
Input Capac i t ance
Out put Capacitance
Reverse Tr ansfer
Capacit a nc e
VDS=25V f=1MHz VGS= 0 750
270
60
pF
pF
pF
STB36NF02L
2/6
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