SGS Thomson Microelectronics STB30NS15 Datasheet
STB30NS15
N-CH A NNEL 150V - 0.075 Ω - 30A D2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
V
DSS
STB30NS15 150 V <0.1
■ TYPICAL R
■ EXCEPTIONA L dv/d t CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED
(on) = 0.075 Ω
DS
R
DS(on)
I
D
Ω
30 A
CHARACTERIZATION
■ FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced highefficiency, high-frequency isolate d DC-DC c onverters for
Telecom and Computer a pplications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL
3
1
D2PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
P
tot
dv/dt
E
AS
T
stg
T
j
•) Pulse width limited by safe operating area. (1) I
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
150 V
150 V
Gate- source Voltage ± 20 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
•)
Drain Current (pulsed) 120 A
Total Dissipation at TC = 25°C
30 A
21 A
110 W
Derating Factor 0.73 W/°C
(1)
Peak Diode Recovery voltage slope 2 V/ns
(2)
Single Pulse Avalanche Energy 250 mJ
Storage Temperature
Max. Operating Junction Temperature
≤ 30A, di/dt ≤ 100A/µs, VDD ≤ V
SD
(2) Starting Tj = 25 oC, ID = 15A, VDD = 25V
-55 to 175 °C
(BR)DSS
, Tj ≤ T
JMAX.
1/9October 2001
STB30NS15
THERMA L D ATA
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1.36
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 250 µA, VGS = 0
V
(BR)DSS
Drain-source
I
D
150 V
Breakdown Voltage
= Max Rating
V
DS
= Max Rating TC = 125°C
V
DS
= ± 20V
V
GS
1
10
±100 nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= V
DS
GS
= 10 V ID = 15 A
V
GS
ID = 250 µA
234V
0.075 0.1
V
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 20 V ID = 15 A
DS
= 25V f = 1 MHz VGS = 0
V
DS
8S
990
175
110
µA
µA
Ω
pF
pF
pF
2/9
STB30NS15
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Q
g
Q
gs
Q
gd
(*)
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 75 V ID =15 A
V
DD
= 4.7
R
Ω
G
VGS = 10 V
(Resistive Load, Figure 3)
=120V ID=30A VGS=10V
V
DD
12
28
64
8
27
ns
ns
nC
nC
nC
SWITCHING OFF
(*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 75 V ID = 15 A
t
d(off)
t
Turn-off Delay Time
f
Fall Time
V
DD
= 4.7Ω, V
R
G
GS
= 10 V
50
12
(Resistive Load, Figure 3)
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
(*)
V
= 120 V ID = 30 A
clamp
= 4.7Ω, V
R
G
GS
(Inductive Load, Figure 5)
= 10 V
50
17
11
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by T
Safe Operating Area
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
jmax
I
= 30 A VGS = 0
SD
= 30 A di/dt = 100A/µs
I
SD
= 50 V Tj = 150°C
V
DD
(see test circuit, Figure 5)
Thermal Impedance
30
120
1.3 V
190
1.25
13
ns
ns
ns
ns
ns
ns
µ
A
A
C
A
3/9
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