SGS Thomson Microelectronics STB30NE06L Datasheet
STB30NE06L
N - CHANNEL 60V - 0.35
TYPE V
ST B30NE06L 60 V < 0 .05 Ω 30 A
■ TYPICALR
■ 100%AVALANCHETESTED
■ LOW GATE CHARGE 100
■ APPLICATIONORIENTED
DS(on)
DSS
= 0.035 Ω
CHARACTERIZATION
■ FORTHROUGH-HOLE VERSION CONTACT
SALESOFFICE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronisunique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a
remarkablemanufacturingreproducibility.
APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC& DC-AC CONVERTERS
■ SYNCHRONOUSRECTIFICATION
R
DS(on)
o
C
I
D
Ω
- 30A - D2PAK
STripFET POWER MOSFET
PRELIMINARY DATA
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
T
(•) Pulse width limited by safe operating area
March 1999
Dra in- sour c e Volt age (VGS=0) 60 V
DS
Dra in- gat e Voltage (RGS=20kΩ)60V
DGR
Gat e-source Volt age
GS
I
Dra in Cu rr ent (contin uous ) a t Tc=25oC30A
D
I
Dra in Cu rr ent (contin uous ) a t Tc=100oC21A
D
(•) Dra in Cu rr ent (pulsed) 120 A
Tot al Dissipat ion at Tc=25oC80W
tot
Der ati ng Fact or 0.53 W/
St orage Temperat ure -65 to 175
stg
T
Max. Operating Junct ion Temperat ure 175
j
20 V
±
o
C
o
C
o
C
1/6
STB30NE06L
THERMAL DATA
R
thj-case
Rthj-a m b
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead T e m pe ra t ure For Soldering P urpose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanc he Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
1.875
62.5
0.5
300
20 A
100 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 60 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µA 1 1.75 2.5 V
Sta t ic Drain-s our c e On
Resistance
VGS=5V ID=15A
=10V ID=15A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on)max
0.045
0.035
30 A
0.06
0.05
VGS=10V
DYNAMIC
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=15 A 10 18 S
VDS=25V f=1MHz VGS= 0 1350
195
58
µ
µA
Ω
Ω
pF
pF
pF
A
2/6
Loading...