SGS Thomson Microelectronics STB30N10 Datasheet
STB30N10
N - CHANNEL 100V - 0.06Ω - 30A - D2PAK
POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
STB30N10 100 V < 0.07 Ω 30 A
■
TYPICAL R
■
AVALANCHE RUGG ED TECHNOLO GY
■
100% AVALANCHE TESTED
■
REPETITIVE AVALANCHE DATA AT 100oC
■
LOW GATE CHARGE
■
VERY HIGH CURRENT CAPABILITY
■
APPLICATION ORIENTED
DS(on)
= 0.06
Ω
CHARACTERIZATION
■
SURFACE-MO UNTING D2P AK (TO-263)
POWER PACKAGE IN TUBE (NO SUF F IX )
OR IN TAPE & REEL (SUFFIX "T4")
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCH ING
■
SOLENOID AND RELAY DRIVERS
■
REGULATORS
■
DC-DC & DC-AC CONVERTERS
■
MOTOR CONTROL, AUDIO AMPLIFIERS
■
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
T
(•) Pulse width limited by safe operating area
September 1998
Drain-source Voltage (VGS = 0) 100 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC30A
D
I
Drain Current (continuous) at Tc = 100 oC21A
D
100 V
(•) Drain Current (pulsed) 120 A
Total Dissipation at Tc = 25 oC 150 W
tot
Derating Factor 1 W/
Storage Temperature -65 to 175
stg
T
Max. Operating Junction Temperature 175
j
o
C
o
C
o
C
1/5
STB30N10
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max)
j
DD
= 25 V)
1
62.5
0.5
30 A
240 mJ
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
100 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating x 0.8 Tc = 100 oC
DS
V
= ± 20 V
GS
10
10
±100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
234V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10 V ID = 15 A 0.06 0.07 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
D(on)
x R
DS(on)max VGS
= 10 V 30 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 15 A 10 20 S
85
3600
500
110
= 0 2600
GS
350
µA
µA
pF
pF
pF
2/5
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