SGS Thomson Microelectronics STB22NE03L Datasheet
STB22NE03L
N - CHANNEL 30V - 0.034Ω - 22A TO-263
STripFET POWER MOSFET
PRELIMINARY DATA
■ TYPICALR
DS(on)
= 0.034 Ω
■ EXCEPTIONALdv/dtCAPABILITY
■ 100%AVALANCHETESTED
■ LOW GATE CHARGE AT 100
o
C
■ APPLICATIONORIENTED
CHARACTERIZATION
■ ADDSUFFIX ”T4” FORORDERING INTAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDAND RELAY DRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-AC CONVERTERS
■ AUTOMOTIVEENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
April 1999
1
3
D2PAK
TO-263
(suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Dra in- sour c e Volt age (VGS=0) 30 V
V
DGR
Dra in- gat e Voltage (RGS=20kΩ)30V
V
GS
Gat e-source Voltage ± 15 V
I
D
Dra in Cu rr ent (continuous) at Tc=25oC22A
I
D
Dra in Cu rr ent (continuous) at Tc=100oC16A
I
DM
(•) D rain Current (pulsed ) 88 A
P
tot
Tot al Dissipat ion at Tc=25oC60W
Der ati ng Fact or 0.4 W/
o
C
dv/dt (
1) Peak Diode Recovery volt age slope 6 V/ns
T
stg
St orage Tempe rat ure -65 to 175
o
C
T
j
Max. Operating Junc t ion Temper at ure 175
o
C
(•) Pulse width limited by safe operating area (1)ISD≤ 22 A, di/dt ≤ 300 A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX
TYPE V
DSS
R
DS(on)
I
D
ST B22NE03L 30 V <0.05 Ω 22 A
1/6
THERMAL DATA
R
thj-case
Rthj-a mb
R
thc-sink
T
l
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Tempe rat ur e F or S o ldering Purpos e
2.5
62.5
0.5
300
o
C/W
oC/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Un it
I
AR
Avalanche Current, R epetitive or Not-Repetitive
(pulse width limited by T
j
max)
22 A
E
AS
Single Pul se Avalanc he E nergy
(starting T
j
=25oC, ID=IAR,VDD=15V)
TBD mJ
ELECTRICAL CHARACTERISTICS
(T
case
=25oC unless otherwisespecified)
OFF
Symbol Parameter Test Condit ions Min. Typ. Max. U nit
V
(BR)DSS
Drain-source
Break dow n Vo lt age
ID=250µAVGS=0 30 V
I
DSS
Zero Gate Volta ge
Drain Curre nt (V
GS
=0)
V
DS
=MaxRating
V
DS
=MaxRating Tc= 125oC
1
10
µ
A
µA
I
GSS
Gat e- bod y Leakag e
Current (V
DS
=0)
V
GS
=± 15 V
±
100 nA
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. Max. U nit
V
GS(th)
Gate Threshold Voltage VDS=VGSID= 250 µA11.72.5V
R
DS(on)
Sta t ic Drain-s our c e On
Resistance
VGS=10V ID=11A
V
GS
=5V ID=11A
0.034
0.049
0.05
0.06
Ω
Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
VGS=10V
22 A
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. Max. U nit
g
fs
(∗)Forward
Tr ansc on duc tance
VDS>I
D(on)xRDS(on)maxID
=11 A 7 13 S
C
iss
C
oss
C
rss
Input Capaci t ance
Out put Capac it anc e
Reverse Transfer
Capacit a nc e
VDS=25V f=1MHz VGS= 0 680
160
60
pF
pF
pF
STB22NE03L
2/6
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