SGS Thomson Microelectronics STP20NM50FD, STB20NM50FD-1 Datasheet
STP20NM50FD
STB20NM50FD-1
N-CHANNEL 500V - 0.22Ω -20ATO-220/I2PAK
FDmesh™ Power MOSFET (with FAST DIODE)
TYPE V
STP20NM50FD
STB20NM50FD-1
■ TYPICAL R
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCEAND GATE CHARGE
■ LOW GATE INPUT RESISTANCE
■ TIGHT PROCESS CONTROL AND HIGH
DSSRDS(on)Rds(on)*QgID
500V
500V
(on) = 0.22Ω
DS
<0.25Ω
<0.25Ω
8.36 Ω*nC
8.36 Ω*nC
20 A
20 A
MANUFACTURING YIELDS
DESCRIPTION
The FDmesh™ associates all advantages of red uc ed
on-resistance and fast switching with an intrinsic fa strecovery body diode. I t is therefore strongly recommended forbridge to pologies,in particularZVS phaseshift converters.
3
2
1
TO-220
I
NTERNAL SCHEMATIC DIAGRAM
I2PAK
(Tabless TO-220)
3
2
1
APPLICATIONS
■ ZVSPHASE-SHIFTFULLBRIDGECONVERTERS
FOR SMPS AND WELDING EQUIPMENT
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP20NM50FD P20NM50FD TO-220 TUBE
STB20NM50FD-1 B20NM50FD-1
I
2
PAK
TUBE
1/9August 2003
STP20NM50FD/STB20NM50FD- 1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns
T
stg
T
j
() Pulse width limited by safe operating area
≤ 20A,di/dt≤ 200 A/µs, VDD≤ V
(1) I
SD
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.65 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
500 V
500 V
Gate- source Voltage ±30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 80 A
Total Dissipation at TC= 25°C
20 A
14 A
192 W
Derating Factor 1.2 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(BR)DSS,Tj≤TJMAX.
Maximum Lead Temperature For Soldering Purpose 300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=35V)
j
10 A
700 mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th
R
DS(on)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
Resistance
ID= 250 µA, VGS=0 500 V
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ±30V ±100 nA
GS
V
DS=VGS,ID
= 250 µA
34
1µA
10 µA
5V
VGS= 10V, ID= 10A 0.22 0.25 Ω
2/9
STP20NM50FD/STB20NM50FD-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
D(on)xRDS(on)max,
ID= 10A
C
iss
C
oss
C
rss
C
oss eq.
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(2) Equivalent Output
=25V,f=1MHz,VGS= 0 1380
V
DS
VGS=0V,VDS= 0V to 400V 130 pF
Capacitance
R
g
Gate Input Resistance f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) C
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
when VDSincreases from 0 to 80% V
oss
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time 20 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
=250V,ID=10A
DD
RG= 4.7Ω VGS=10V
(see test circuit, Figure 3)
VDD=400V,ID= 20A,
V
=10V
GS
9S
290
40
2.8 Ω
22 ns
38
53 nC
18
10
pF
pF
pF
nC
nC
DSS
.
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time 15 ns
Cross-over Time 30 ns
= 400V, ID=20A,
DD
R
=4.7Ω, VGS= 10V
G
(see test circuit, Figure 5)
6ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 20 A
(2)
Source-drain Current (pulsed) 80 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 2 µC
ISD=20A,VGS=0
I
= 20 A, di/dt = 100A/µs,
SD
=60V,Tj= 150°C
V
DD
(see test circuit, Figure 5)
245 ns
Reverse Recovery Current 16 A
1.5 V
3/9
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