SGS Thomson Microelectronics STP20NM50FP, STP20NM50, STB20NM50-1, STB20NM50 Datasheet
STP20NM50 - STP20NM50FP
STB20NM50 - STB20NM50-1
N-CH A NNEL 500V - 0. 20Ω - 20A TO-220/FP/D2PAK/I2PAK
MDmesh™Power MOSFET
TYPE V
STP20NM50 /FP
STB20NM50
STB20NM50 -1
■ TYPICAL R
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE CHARGE
■ LOW GATE INPUT RESIST ANC E
■ TIGHT PROCESS CONTROL AND HIGH
DS
DSS
500V
500V
500V
(on) = 0.20Ω
R
DS(on)
<0.25Ω
<0.25Ω
<0.25Ω
I
D
20 A
20 A
20 A
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™
is a new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company’s PowerMESH™ horizontal layout. The
resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche
characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly bett er than that of similar
com petition’ s prod uct s.
APPLICATIONS
The MDm esh™ family is ve ry suitable for incr easing
power density of high voltage converters allowing system miniaturization and higher efficiencies.
3
1
D2PAK
TO-220
2
1
I²PAK
(Tabless TO-220)
I
NTERNAL SCHEMATIC DIAGRAM
3
1
TO-220FP
3
2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP(B)20NM50(-1) STP20NM50FP
V
DS
V
DGR
V
GS
I
D
I
D
IDM (●)
P
TOT
dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns
V
ISO
T
stg
T
j
(•)Pu l se width limited by safe oper ating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
500 V
500 V
Gate- source Voltage ±30 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
20 20(*) A
12.6 12.6(*) A
Drain Current (pulsed) 80 80(*) A
Total Dissipation at TC = 25°C
192 45 W
Derating Factor 1.2 0.36 W/°C
Insulation Winthstand Voltage (DC) -- 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1)ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V
(*)Limit ed only by maxi m um temperatur e al l owed
(BR)DSS
, Tj ≤ T
JMAX.
1/12August 2002
STP20NM50/FP/STB20NM50/ST B 20NM50-1
THERMA L D ATA
TO-220/I²PAK/
D²PAK
Rthj-case Thermal Resistance Junction-case Max 0.65 2.8 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID = 5 A, VDD = 50 V)
j
TO-220FP
10 A
650 mJ
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA, VGS = 0 500 V
Breakdown Voltage
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±30V ±100 nA
GS
1µA
10 µA
ON
I
I
GSS
(1)
DSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250µA
DS
345V
VGS = 10V, ID = 10A 0.20 0.25 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS > I
ID= 10A
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 285 pF
Reverse Transfer
Capacitance
C
(2) Equivalent Output
oss eq.
VGS = 0V, VDS = 0V to 400V 130 pF
Capacitance
R
g
Gate Input Resistance f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
1. Pulsed: Pu l se duration = 300 µs, duty cyc l e 1.5 %.
2. C
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
10 S
1480 pF
34 pF
1.6 Ω
when VDS increase s fr om 0 to 80%
oss
2/12
STP20NM50/FP/STB20NM50/ST B 20NM50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 16 ns
Total Gate Charge
Gate-Source Charge 13 nC
Gate-Drain Charge 19 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time 8.5 ns
Cross-over Time 23 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.
2. Pulse width l i m i ted by safe operating area .
Source-drain Current 20 A
(2)
Source-drain Current (pulsed) 80 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 250 V, ID = 10 A
DD
RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
V
= 400 V, ID = 20 A,
DD
VGS = 10 V
V
= 400 V, ID = 20 A,
DD
RG=4.7Ω, V
GS
= 10 V
(see test circuit, Figure 5)
ISD = 20 A, VGS = 0
= 20 A, di/dt = 100A/µs,
I
SD
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
= 20 A, di/dt = 100A/µs,
I
SD
V
= 100 V, Tj = 150°C
DD
(see test circuit, Figure 5)
24 ns
40 56 nC
9ns
1.5 V
350
4.6
26
435
5.9
27
ns
µC
A
ns
µC
A
Safe Operating Area For TO-220FPSafe Operating Area For TO-220 / I²PAK / D²PAK
3/12
STP20NM50/FP/STB20NM50/ST B 20NM50-1
Thermal Impedance For TO-220 / I²PAK / D²PAK Thermal Impedance For TO-220FP
Transfer CharacteristicsOutput Characteristics
Transconductance
4/12
Static Drain-source On Resistance
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