SGS Thomson Microelectronics STB20NE06L Datasheet
STB20NE06L
N - CHANNEL 60V - 0.06
TYPE V
DSS
ST B20NE06L 60 V < 0. 07 Ω 20 A
■ TYPICALR
■ EXCEPTIONALdv/dtCAPABILITY
■ 100%AVALANCHETESTED
■ LOW GATE CHARGE 100
■ LOW THRESHOLDDRIVE
■ ADDSUFFIX ”T4” FORORDERING INTAPE
DS(on)
= 0.06 Ω
& REEL
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronisunique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a
remarkablemanufacturingreproducibility.
APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC& DC-AC CONVERTERS
■ SYNCHRONOUSRECTIFICATION
R
DS(on)
o
C
I
D
Ω
- 20A TO-263
STripFET POWER MOSFET
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/ dt Peak Diode Recovery voltage slope 7 V/ns
T
(•) Pulse width limited by safe operating area (1)ISD≤ 20 A, di/dt ≤ 300 A/µs, VDD≤ V
June 1999
Dra in- sour c e Volt age (VGS=0) 60 V
DS
Dra in- gat e Voltage (RGS=20kΩ)60V
DGR
Gat e-source Volt age
GS
I
Dra in Cu rr ent (contin uous ) a t Tc=25oC20A
D
I
Dra in Cu rr ent (contin uous ) a t Tc=100oC14A
D
20 V
±
(•) Drain Current (pulsed ) 80 A
Tot al Dissipation at Tc=25oC70W
tot
Der ati ng Fact or 0.47 W/
St orage Temperat ure -65 to 175
stg
T
Max. Operating Junct ion Temperat ure 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
STB20NE06L
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e C as e - sink Ty p
Maximum Lead T e m pe ra t ure For Soldering P urp os e
l
Avalanche Current, R epetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanc he Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=35V)
j
max)
j
2.14
62.5
0.5
300
20 A
100 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 60 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Volta ge
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µA11.72.0V
Sta t ic Drain-s our c e On
Resistance
VGS=5V ID=10A
=10V ID=10A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on)max
0.07
0.06
20 A
0.085
0.07
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=10 A 5 9 S
VDS=25V f=1MHz VGS= 0 800
125
40
µ
µA
Ω
Ω
pF
pF
pF
A
2/8
STB20NE06L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
d(on)
t
Tur n-on Delay T ime
Rise Time
r
VDD=30V ID=10A
R
=4.7 W VGS=5V
G
20
45
(see test circuit, figure 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD=48V ID=20A VGS=5V 14
8
4
20 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Off-voltage Rise T ime
Fall T ime
f
Cross-over Tim e
c
VDD=48V ID=20A
=4.7 Ω VGS=5V
R
G
(see test circuit, figure 5)
10
25
42
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
20
80
(pulsed)
(∗)ForwardOnVoltage ISD=20A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 20 A di/dt = 100 A/µs
=30V Tj= 150oC
V
DD
(see test circuit, figure 5)
65
130
Charge
Reverse Recovery
4
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
nC
A
SafeOperating Area ThermalImpedance
3/8
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