SGS Thomson Microelectronics STB200NF03-1, STB200NF03 Datasheet

STB200NF03 STB200NF03-1

N-CHANNEL 30V - 0.0032 Ω - 120A D²PAK/I²PAK/TO-220

TYPE

STB200NF03/-1 STP200NF03

■ TYPICAL R

■ STANDARD THRESHOLD DRIVE

■ 100% AVALANCHE TESTED

V

DSS

30 V 30 V

(on) = 0.0032Ω

DS

DESCRIPTION

This Power MOSFET is the latest dev elo pment of

STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SWITCHING SPEED

■ DC-DC & DC-AC CONVERTERS

■ SOLENOID AND RELAY DRIVERS

R

DS(on)

<0.0036 <0.0036

Ω Ω

I

D

120 A(**) 120 A(**)

STP200NF03

STripFET™ II POWER MOSFET

AUTOMOTIVE SPECIFIC

3

1

²

D

PAK

TO-263

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

²

PAK

I

TO-262

3

2

1

Ordering Information

STB200NF03T4 B200NF03

SALES TYPE MARKING PACKAGE PACKAGING

STP200NF03 P200NF03 TO-220 TUBE STB200NF03-1 B200NF03

2

D

PAK

2

I

PAK

T APE & REEL

TUBE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

(**) Drain Current (continuous) at T

I

D

I

D

(

I

DM

P

tot

Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)

30 V 30 V

Gate- source Voltage ± 20 V

= 25°C

C

Drain Current (continuous) at TC = 100°C

•)

Drain Current (pulsed) 480 A Total Dissipation at TC = 25°C

120 A 120 A

300 W

Derating Factor 2.0 W/°C

(1)

dv/dt

E

AS

T

stg

T

j

Pulse widt h l i m i ted by safe op erating area.

(

•)

(**) Curre nt Limited by Pac kage

Peak Diode Recovery voltage slope 1.5 V/ns

(2)

Single Pulse Avalanche Energy 1.45 J Storage Temperature Operating Junction Temperature

(1) ISD ≤120A, di/dt ≤400A/µs, VDD ≤ V

(2) Starting Tj = 25 oC, ID = 60 A, VDD = 25 V

-55 to 175 °C

(BR)DSS

, Tj ≤ T

October 2002

JMAX

1/14

STB200NF03/-1 STP200NF03

THERMA L D ATA

Rthj-case

Rthj-amb

Rthj-pcb

T

Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Junction-pcb Maximum Lead Temperature For Soldering Purpose

l

(for 10 sec. 1.6 mm from case)

Max Max Max

Typ

0.5

62.5

see curve on page 6

300

°C/W °C/W °C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

(BR)DSS

Drain-source

= 250 µA VGS = 0

D

30 V

Breakdown Voltage

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

V

= ± 20V

GS

1

10

±100 nA

ON

(*)

I

DSS

I

GSS

Zero Gate Voltage Drain Current (V

GS

Gate-body Leakage Current (V

DS

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage Static Drain-source On

= VGS I

DS

V

= 10 V ID = 60 A

GS

= 250 µA

D

24V

0.0032 0.0036

V

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance Input Capacitance

Output Capacitance Reverse Transfer Capacitance

V

15 V ID= 60 A

DS =

= 25V, f = 1 MHz, VGS = 0

V

DS

200 S

4950 1750

280

µA µA

Ω

pF pF pF

2/14

STB200NF03/-1 STP200NF03

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 15 V ID = 60 A

t

d(on)

Turn-on Delay Time

t

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 10 V

G

(Resistive Load, Figure 3)

Q

g

Q

gs

Q

gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

= 24V ID= 120A VGS= 10V

V

DD

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 15 V ID = 60 A

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 10 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by s af e operatin g area.

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage Reverse Recovery Time

Reverse Recovery Charge Reverse Recovery Current

I

= 120 A VGS = 0

SD

= 120 A di/dt = 100A/µs

I

SD

V

= 25 V Tj = 150°C

DD

(see test circuit, Figure 5)

30

195

113

32 41

75 60

70

170

5

140 nC

120 480

1.3 V

ns ns

nC nC

ns ns

A A

ns

nC

A

Safe Operating Area Thermal Impedance

3/14

STB200NF03/-1 STP200NF03

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

4/14

STB200NF03/-1 STP200NF03

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature.

. .

Power Derating vs Tc Max Id Current vs Tc.

5/14