SGS Thomson Microelectronics STB19NB20-1 Datasheet

STP19NB20 - STP19NB20FP

STB19NB20-1

N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK

PowerMESH™ MOSFET

TYPE V

STP19NB20
STP19NB20 FP
STB19NB20 -1

■ TYPICAL R

■ EXTREMELY HIGH dv/d t C APABILITY

■ 100% AVALANCHE TESTED

■ NEW HIGH VOLTAGE BENCHMARK

■ GATE CHARGE MINIMIZED

DS

DSS

200 V
200 V
200 V

(on) = 0.15 Ω

R

DS(on)

< 0.18 Ω
< 0.18 Ω
< 0.18 Ω

I

D

19 A
10 A
19 A

DESCRIPTION

Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad­vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi­nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris­tics.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLIES ( SMPS)

■ DC-AC CONVERTERS FOR TELECOM,

INDUSTRIAL AND CONSUMER
ENVIRONMENT

TO-220

3

2

1

I2PAK

(Tabless TO-220)

INTERNAL SCHEMATIC DIAGRAM

TO-220FP

1

3

2

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP(B)19NB20(-1) STP19NB20FP

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 5.5 V/ns

V

ISO

T

stg

T

(•)Pu l se width limite d by safe operating area

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

200 V
200 V

Gate- source Voltage ± 30 V

Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

(l)

Drain Current (pulsed) 76 76 A
Total Dissipation at TC = 25°C

19 10 A
12 6.0 A

125 35 W

Derating Factor 1 0.28 W/°C

Insulation Withstand Voltage (DC) - 2500 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

j

(1)ISD ≤19 A, di/dt ≤300A/µs, VDD ≤ V

(BR)DSS

, Tj ≤ T

JMAX

1/12August 2002

STP19NB20/FP/STB19NB20-1

THERMA L D ATA

TO-220/I2PAK

Rthj-case Thermal Resistance Junction-case Max 1 3.57 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose 300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID = IAR, VDD = 50 V)

j

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

ID = 250 µA, VGS = 0 200 V

= Max Rating

V

DS

V

= Max Rating, TC = 125 °C

DS

V

= ±30V ±100 nA

GS

TO-220FP

19 A

580 mJ

1µA

10 µA

ON

(1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS, ID = 250µA

DS

VGS = 10V, ID = 9.5 A

345V

0.15 0.18 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 285 pF
Reverse Transfer

Capacitance

ID= 9.5 A

V

DS

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

3S

1000 pF

45 pF

2/12

STP19NB20/FP/STB19N B20-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 15 ns
Total Gate Charge

Gate-Source Charge 9.5 nC
Gate-Drain Charge 13 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

f

t

c

Off-voltage Rise Time
Fall Time 10 ns
Cross-over Time 20 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Puls e duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 19 A

(2)

Source-drain Current (pulsed) 76 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 1.5 µC
Reverse Recovery Current 14.5 A

= 100V, ID = 9.5 A

DD

RG=4.7Ω VGS = 10V
(see test circuit, Figure 3)

V

= 160V, ID = 19 A,

DD

V

= 10V

GS

V

= 160V, ID = 19 A,

DD

R

= 4.7Ω, V

G

GS

= 10V

(see test circuit, Figure 5)

ISD = 19 A, VGS = 0
I

= 19 A, di/dt = 100A/µs,

SD

V

= 50V, Tj = 150°C

DD

(see test circuit, Figure 5)

15 ns

29 40 nC

10 ns

1.5 V

210 ns

Safe Operating Area for TO-220FPSafe Operating Area for TO-220/I2PAK

3/12

STP19NB20/FP/STB19NB20-1

Thermal Impedance for TO-220/I

2

PAK Thermal Impedance for TO-220FP

Output Characteristics

Tranconductance

Tranfer Characteristics

Static Drain-Source On Resistance

4/12