SGS Thomson Microelectronics STB18N20 Datasheet
N - CHANNEL ENHANCEMENT MODE
TYPE V
DSS
STB18N20 200 V < 0.18 Ω 18 A
R
DS(on)
I
D
STB18N20
POWER MOS TRANSISTOR
PRELIMINARY DATA
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHEDATAAT 100
■ LOW GATE CHARGE
■ VERYHIGH CURRENT CAPABILITY
■ APPLICATIONORIENTED
DS(on)
=0.145 Ω
o
C
CHARACTERIZATION
■ THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGEIN TUBE(SUFFIX ”-1”)
■ SURFACE-MOUNTINGD2PACK (TO-263)
POWERPACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDANDRELAY DRIVERS
■ REGULATORS
■ DC-DC& DC-AC CONVERTERS
■ MOTORCONTROL,AUDIO AMPLIFIERS
■ AUTOMOTIVEENVIRONMENT (INJECTION,
ABS, AIR-BAG,LAMPDRIVERS,Etc.)
3
2
1
I2PAK
TO-262
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
DGR
V
I
DM
P
T
(•) Pulse width limited by safe operating area
March 1996
Drain-source Voltage (VGS= 0) 200 V
DS
Drain- gate Voltage (RGS=20kΩ) 200 V
Gate-source Voltage ± 20 V
GS
I
Drain Current (c ont inuo us) a t Tc=25oC18A
D
I
Drain Current (c ont inuo us) a t Tc=100oC11A
D
(•) Drain Current (puls ed) 72 A
Total Dissipat i on at Tc=25oC 125 W
tot
Derat ing Factor 1 W/
Stora ge Temperature -65 to 150
stg
T
Max. Operat ing Junct i on Temperatu re 150
j
o
o
o
C
C
C
1/10
STB18N20
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max V alue Unit
I
AR
E
E
I
AR
Ther mal Resistance Junct ion-case Max
Ther mal Resistance Junct ion-ambient Max
Ther mal Resistance Case-s i nk Typ
Maximum Lead Tempera t ure For Solder ing Purpo se
l
Avalanche Current , Repet it iv e or Not-Repe t it ive
(pulse width limi t ed by T
Single Pu lse Avalanc he E nerg y
AS
(starti ng T
Repetitive Avalanche Energy
AR
=25oC, ID=IAR,VDD=25V)
j
(pulse width limi t ed by T
max, δ <1%)
j
max, δ <1%)
j
Avalanche Current , Repet it iv e or Not-Repe t it ive
=100oC, p ulse wid t h limited by Tjmax, δ <1%)
(T
c
1
62.5
0.5
300
18 A
50 mJ
10 mJ
11 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µAV
= 0 200 V
GS
Break dow n Voltage
I
I
DSS
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leaka ge
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRatingx0.8 Tc= 125oC
DS
V
= ± 20 V ±100 nA
GS
250
1000µAµA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
R
DS(on)
Gat e Thre shold Volt age VDS=VGSID=250µA234V
St at ic Drain-source On
VGS=10V ID= 9 A 0. 145 0.18 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)maxVGS
=10 V 18 A
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on ductance
C
C
C
Input Capac it an ce
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=9A 6.5 13 S
VDS=25V f=1MHz VGS= 0 1600
270
50
2100
350
70
pF
pF
pF
2/10
STB18N20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on Time
t
Rise Time
r
Tur n-on C urr ent Slope VDD=100V ID=18A
on
Tot al Gat e Charge
g
Gate-Source Charge
gs
Gat e- Drain Charge
gd
VDD=100V ID=18A
=9.1 Ω VGS=10V
R
G
=9.1 Ω VGS=10V
R
G
ID=18A VGS=10V
= M ax Rating x 0.8
V
DD
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage Rise Time
t
Fall T ime
f
Cross-over Time
c
VDD=160V ID=18A
=9.1Ω VGS=10V
R
G
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗)ForwardOnVoltage ISD=18A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD=18A di/dt=100A/µs
=100V Tj=150oC
V
DD
Charge
Reverse Recovery
Current
20
75
30
105
470 A/ µs
57
80 nC
11
26
40
35
75
55
50
105
18
72
300
3.3
22
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Area ThermalImpedance
3/10
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