SGS Thomson Microelectronics STB16NF06L Datasheet
STB16NF06L
N-CHANNEL 60V - 0.07 Ω - 16A D2PAK
STripFET™ POWER MOSFET
TYPE
V
DSS
STB16NF06L 60 V <0.09
■ TYPICAL R
■ EXCEPTIONA L dv/d t CAPABILITY
■ LOW GATE CHARGE AT 100
■ LOW THRESHOLD DRIVE
■ SURFACE-MOUNTING D
(on) = 0.07Ω
DS
R
DS(on)
Ω
o
C
2
PAK (TO-263)
I
D
16 A
POWER PACKAG E IN TU BE (NO SU FFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectron is unique "Single Feature Size™" str ipbased process . The res ulting tran sistor sho ws extrem ely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
3
1
D2PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
P
tot
dv/dt
E
AS
T
stg
T
j
(
Pulse width l i mited by safe operating area. (1) ISD ≤ 16A, di/dt ≤ 210A/µs , VDD ≤ V
•)
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60 V
60 V
Gate- source Voltage ± 16 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
•)
Drain Current (pulsed) 64 A
Total Dissipation at TC = 25°C
16 A
11 A
45 W
Derating Factor 0.3 W/°C
(1)
Peak Diode Recovery voltage slope 23 V/ns
(2)
Single Pulse Avalanche Energy 127 mJ
Storage Temperature -65 to 175 °C
Max. Operating Junction Temperature -55 to 175 °C
(2) Starting Tj = 25 oC, ID = 8A, VDD = 30V
(BR)DSS
, Tj ≤ T
JMAX.
1/9February 2002
STB16NF06L
THERMA L D ATA
Rthj-case
Rthj-amb
T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
j
Max
Max
Typ
3.33
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
(BR)DSS
Drain-source
= 250 µA, VGS = 0
D
60 V
Breakdown Voltage
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
V
= ± 16V
GS
1
10
±100 nA
ON
(1)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS I
DS
= 5 V ID = 8 A
V
GS
V
= 10 V ID = 8 A
GS
= 250 µA
D
1V
0.08
0.07
0.10
0.09
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
> I
V
I
D
V
DS
=8 A
DS
x R
D(on)
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
17 S
345
72
29
µA
µA
Ω
Ω
pF
pF
pF
2/9
STB16NF06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 30 V ID = 8 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 4.5 V
G
(Resistive Load, Figure 3)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 48 V ID = 16 A VGS= 5V
V
DD
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 30 V ID = 8 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 4.5 V
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 16 A VGS = 0
SD
= 16 A di/dt = 100A/µs
I
SD
V
= 16 V Tj = 150°C
DD
(see test circuit, Figure 5)
10
37
7.3
2.1
3.1
20
12.5
50
67.5
2.7
10 nC
16
64
1.3 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
Safe Operating Area Thermal Impedance
3/9
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