SGS Thomson Microelectronics STB160NF3LL Datasheet
STB160NF3LL
N-CHANNEL 30V - 0.0026 Ω - 160A D2PAK
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
V
DSS
ST160NF3LL 30 V <0.003
■ TYPICAL R
■ LOW THRESHOLD DRIVE
■ ULTRA LOW ON-RESISTANCE
■ LOGIC LEVEL DEVICE
■ 100% AVALANCHE TESTED
■ SURFACE-MOUNTING D
(on) = 0.0026 Ω
DS
R
DS(on)
Ω
2
PAK (TO-263)
I
D
160 A
POWER PACKAG E IN TU BE (NO SU FFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ SOLENOID AND RELAY DRIVERS
3
1
D2PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
∗
I
(
D
I
D
(
I
DM
P
tot
E
AS
T
stg
T
j
(
Pulse width limited by safe operating area.
•)
(*) Curren t Lim i ted by Pack age
May 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
30 V
30 V
Gate- source Voltage ± 15 V
Drain Current (continuous) at T
)
Drain Current (continuous) at TC = 100°C
•)
Drain Current (pulsed) 640 A
Total Dissipation at TC = 25°C
= 25°C
C
160 A
160 A
300 W
Derating Factor 2 W/°C
(1)
Single Pulse Avalanche Energy 1.2 J
Storage Temperature
Max. Operating Junction Temperature
(1) Starting Tj = 25 oC, ID = 80A, VDD = 20V
-55 to 175 °C
1/7
STB160NF3LL
THERMA L D ATA
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
0.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 250 µA VGS = 0
V
(BR)DSS
Drain-source
I
D
30 V
Breakdown Voltage
= Max Rating
V
DS
= Max Rating TC = 125°C
V
DS
= ± 15 V
V
GS
1
10
±100 nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= V
DS
GS
= 10 V ID = 80 A
V
GS
= 4.5 V ID = 80 A
V
GS
ID = 250 µA
1V
0.0026
0.0032
0.0030
0.0043
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 15 V ID =80 A
DS
= 25V f = 1 MHz VGS = 0
V
DS
60 S
6200
1720
300
µA
µA
Ω
Ω
pF
pF
pF
2/7
STB160NF3LL
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Q
g
Q
gs
Q
gd
(*)
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 15 V ID = 80 A
V
DD
= 4.7
R
Ω
G
VGS = 4.5 V
(Resistive Load, Figure 3)
=24V ID=160A VGS=5V
V
DD
50
350
95
25
45
125 nC
ns
ns
nC
nC
SWITCHING OFF
(*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
SOURCE DRAIN DIODE
(*)
V
DD
= 4.7Ω, V
R
G
GS
(Resistive Load, Figure 3)
= 4.5 V
150
120
= 15 V ID = 80 A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)
Pulse width limited by T
Source-drain Current
(
•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
jmax
I
= 160 A VGS = 0
SD
I
= 160 A di/dt = 100A/µs
SD
= 15 V Tj = 150°C
V
DD
(see test circuit, Figure 5)
160
640
1.3 V
90
200
5
ns
ns
A
A
ns
nC
A
3/7
Loading...