SGS Thomson Microelectronics STB160NF02L Datasheet
STB160NF02L
N-CHANNEL 20V - 0.0018Ω - 160A D2P AK
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE V
DSS
STB160NF02L 20 V < 0.0027
■ TYPICAL R
■ LOW THRESHOLD DRIVE
■ ULTRA LOW ON-RESISTANCE
■ VERY LOW GATE CHARGE
■ 100% AVALANCHE TESTED
(on) = 0.0018Ω
DS
R
DS(on)
I
D
Ω
160 A
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronics unique “Single Feature
™” strip-based process. The re sulting tran-
Size
sistor shows extremely high packing density with
ultra low on-resistance, superior switching characteristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility. This
device is particularly suitable for high current, low
voltage switching application where efficiency is
crucial.
APPLICATIONS
■ BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs
■ DC-DC CONVERTERS
3
1
D2PAK
(TO-263)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
(1) Drain Current (continuos) at TC = 25°C
D
I
D
I
DM
P
TOT
E
AS
T
stg
T
j
(●) Pulse width limited by safe operating area
February 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
20 V
20 V
Gate- source Voltage ±15 V
160 A
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 640 A
Total Dissipation at TC = 25°C
113 A
300 W
Derating Factor 2 W/°C
(2)
Single Pulse Avalanche Energy 2.65 mJ
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C
(1) Limited by Package
≤100A, di/dt ≤300A/µs, VDD ≤ V
(2) I
SD
(BR)DSS
, Tj ≤ T
JMAX.
1/7
STB160NF02L
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Maximum Lead Temperature For Soldering Purpose 300 °C
Drain-source
ID = 250 µA, VGS = 0 20 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current VDS > I
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±15V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10 V, ID = 80 A
VGS = 5 V, ID = 80 A
x R
D(on)
DS(on)max,
1V
0.0018 0.0027
0.0038 0.0064
160 A
1µA
10 µA
VGS=10V
Ω
Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 3250 pF
Reverse Transfer
Capacitance
ID=80 A
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
210 S
5600 pF
750 pF
2/7
STB160NF02L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 390 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
d(off)
t
f
t
f
t
c
Turn-off-Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 160 A
(1)
Source-drain Current (pulsed) 640 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 10V, ID = 80A
DD
RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)
= 16V, ID = 160A,
V
DD
VGS = 10V
VDD = 10V, ID = 80A,
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
GS
=40A
D
= 10V
Vclamp =16V, I
RG=4.7Ω, V
ISD = 160A, VGS = 0
= 80A, di/dt = 100A/µs,
I
SD
VDD = 15V, Tj = 25°C
(see test circuit, Figure 5)
30 ns
130
20
54
100
90
105
50
100
1.3 V
90
225
5
nC
nC
nC
ns
ns
ns
ns
ns
ns
nC
A
3/7
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