SGS Thomson Microelectronics STW15NK50Z, STP15NK50ZFP, STP15NK50Z, STB15NK50Z-1, STB15NK50Z Datasheet
STP15NK50Z/FP, STB15NK50Z
STB15NK50Z-1, STW15NK50Z
N-CHANNEL500V-0.30Ω-14ATO-220/FP/D2PAK/I2PAK/TO-247
Zener-Protected SuperMESH™Power MOSFET
TYPE V
STP15NK50Z
STP15NK50ZFP
STB15NK50Z
STB15NK50Z-1
STW15NK50Z
■ TYPICAL R
■ EXTREMELY HIGHdv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSICCAPACITANCES
■ VERY GOOD MANUFACTURING
500 V
500 V
500 V
500 V
500 V
(on) = 0.30 Ω
DS
DSS
R
DS(on)
< 0.34 Ω
< 0.34 Ω
< 0.34 Ω
< 0.34 Ω
< 0.34 Ω
I
D
14 A
14 A
14 A
14 A
14 A
Pw
160 W
40 W
160 W
160 W
160 W
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis taken to ensure a very good dv/dt capability for the
most demanding applicat ions. Such series complements S T full range of high voltage MOSFETs including revolutionary MDm es h™ products.
TO-220
1
3
2
TO-220FP
TO-247
3
2
1
I2PAK
D2PAK
INTERNAL SCHEMATIC DIAGRAM
3
2
1
3
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP15NK50Z P15NK50Z TO-220 TUBE
STP15NK50ZFP P15NK50ZFP TO-220FP TUBE
STB15NK50ZT4 B15NK50Z
STB15NK50Z B15NK60Z
STB15NK50Z-1
B15NK50Z
STW15NK50Z W15NK50Z TO-247 TUBE
2
PAK
D
2
D
I
2
PAK
PAK
(ONLY UNDER REQUEST)
TAPE & REEL
TUBE
TUBE
1/14August 2002
STP15NK50Z, STP15N K 50ZFP, STB15NK 50Z, STB15NK50Z-1, STW15NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP15NK50Z
STB15NK50Z
STB15NK50Z-1
I
V
DM
P
V
DGR
V
I
I
TOT
DS
GS
D
D
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 56 56 (*) 56 A
Total Dissipation at TC= 25°C
14 14 (*) 14 A
8.8 8.8 (*) 8.8 A
160 40 160 W
Derating Factor 1.28 0.32 1.28 W/°C
I
GS
V
ESD(G-S)
Gate-source Current (DC) ± 20 mA
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
≤14A, di/dt ≤200A/µs,VDD≤ V
(1) I
SD
(*) Limited only by maximum temperature allowed
Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
STP15NK50ZFP STW15NK50Z
500 V
500 V
-55 to 150
-55 to 150
°C
°C
THERMAL DATA
TO-220
2
I
PAK
Rthj-case Thermal Resistance Junction-case Max 0.78 3.1 0.78 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max (#) 60 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
2
D
TO-220FP TO-247
PAK
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=50V)
j
14 A
300 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD c apability, but also to make them sa fely absorb pos sible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achie ve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid t he
usage of external components.
2/14
STP15NK50Z, STP15N K 50ZFP, STB15NK50 Z, STB15NK50Z-1, STW15NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OT HERWISE SPECIFIED)
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
I
GSS
V
GS(th)
R
DS(on)
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID=7A 12 S
g
fs
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
C
oss eq.
C
iss
C
oss
C
rss
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID=1mA,VGS= 0 500 V
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 20V ±10 µA
GS
V
DS=VGS,ID
= 100µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 7 A 0.30 0.34 Ω
=25V,f=1MHz,VGS= 0 2260
V
DS
264
64
VGS=0V,VDS= 0V to 400V 150 pF
VDD=250V,ID=7A
RG= 4.7Ω VGS=10V
20
23
(Resistive Load see, Figure 3)
VDD=400V,ID=14A,
V
=10V
GS
76
15
40
106 nC
µA
µA
pF
pF
pF
ns
ns
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD= 250 V, ID=7A
R
=4.7ΩVGS=10V
G
62
15
(Resistive Load see, Figure 3)
t
r(Voff)
t
f
t
c
Fall Time
Cross-over Time
Off-voltage Rise Time
= 400V, ID=14A,
V
DD
RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)
13
11
28
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD=14A,VGS=0
I
SD
VDD=29V,Tj= 150°C
(see test circuit, Figure 5)
= 14 A, di/dt = 100A/µs
428
4.2
20
when VDSincreases from 0 to 80%
oss
14
56
1.6 V
ns
ns
ns
ns
ns
A
A
ns
µC
A
3/14
STP15NK50Z, STP15N K 50ZFP, STB15NK 50Z, STB15NK50Z-1, STW15NK50Z
Safe Operating Area For TO-220 /D2PAK/ I2 PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220/D2PAK/ I2PAK
Thermal Impedance For TO-220FP
Safe Operating Area For TO-247
4/14
Thermal Impedance For TO-247
STP15NK50Z, STP15N K 50ZFP, STB15NK50 Z, STB15NK50Z-1, STW15NK50Z
Output Characteristics
Transconductance
Transfer Characteristics
Static Drain-source O n Resistance
Gate Charge vs Gate-so urce Voltage
Capacitance Variations
5/14
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