SGS Thomson Microelectronics STW14NK60Z, STP14NK60ZFP, STB14NK60ZT4, STB14NK60Z-1, STB14NK60Z Datasheet
STP14NK60Z - STP14NK60ZFP
STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
N-CHANNEL 600V-0.45Ω-13.5A TO-220/FP/D2PAK/I2PAK/TO-247
Zener-Protected SuperMESH™Power MOSFET
TYPE V
STP14NK60Z
STP14NK60ZFP
STB14NK60Z
STB14NK60Z-1
STW14NK60Z
■ TYPICAL R
■ EXTREMELY HIGHdv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSICCAPACITANCES
■ VERY GOOD MANUFACTURING
600 V
600 V
600 V
600 V
600 V
(on) = 0.45 Ω
DS
DSS
R
DS(on)
< 0.5 Ω
< 0.5 Ω
< 0.5 Ω
< 0.5 Ω
< 0.5 Ω
I
D
13.5 A
13.5 A
13.5 A
13.5 A
13.5 A
Pw
160 W
40 W
160 W
160 W
160 W
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis taken to ensure a very good dv/dt capability for the
most demanding applicat ions. Such series complements S T full range of high voltage MOSFETs i ncluding revolutionary MDm es h™ products.
TO-220 TO-220FP
3
2
1
2
1
I2PAK
D2PAK
TO-247
3
1
INTERNAL SCHEMATIC DIAGRAM
3
2
1
3
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP14NK60Z P14NK60Z TO-220 TUBE
STP14NK60ZFP P14NK60ZFP TO-220FP TUBE
STB14NK60ZT4 B14NK60ZT4
STB14NK60Z-1 B14NK60Z-1
STW14NK60Z W14NK60Z TO-247 TUBE
2
PAK
D
2
I
PAK
TAPE & REEL
TUBE
1/14January 2003
STP14NK60Z - STP14NK60ZF P - STB14NK60Z - STB 14NK60Z- 1 - STW14NK60Z
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP14NK60Z STB14NK60Z
STB14NK60Z-1
STW14NK60Z
I
V
DM
P
V
DGR
V
I
I
TOT
DS
GS
D
D
Drain-source Voltage (VGS=0)
600 V
Drain-gate Voltage (RGS=20kΩ) 600
Gate- source Voltage ± 20 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 54 54 (*) A
Total Dissipation at TC= 25°C
13.5 13.5 (*) A
8.5 8.5 (*) A
160 40 W
Derating Factor 1.28 0.32 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
T
j
T
stg
() Pulse width limited by safe operating area
(1) I
≤13.5 A, di/dt ≤200 A/µs, VDD≤ V
SD
(*) Limited only by maximum temperature allowed
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
-55 to 150 °C
STP14NK60ZFP
V
THERMAL DATA
2
TO-220/D
2
I
PAK/TO-247
PAK
TO-220FP
Rthj-case Thermal Resistance Junction-case Max 0.78 3.1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
=25°C,ID=IAR,VDD=50V)
j
12 A
300 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achie ve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid t he
usage of external components.
2/14
STP14NK60Z - STP14NK 60Z FP - STB14NK60Z - STB14N K 60Z-1 - STW14NK60Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SP ECIFIED)
CASE
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=1mA,VGS= 0 600 V
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 20 V ±10 µA
GS
V
DS=VGS,ID
= 100 µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 6 A 0.45 0.5 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID=6A 11 S
g
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
=25V,f=1MHz,VGS= 0 2220
V
DS
240
57
VGS=0V,VDS= 0V to 480 V 122 pF
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=300V,ID=6A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)
=480V,ID=12A,
V
DD
V
=10V
GS
26
18
75
13.2
38.6
µA
µA
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD= 300 V, ID=6A
R
=4.7ΩVGS=10V
G
62
13
(Resistive Load see, Figure 3)
t
r(Voff)
t
t
= 480 V, ID=12A,
Off-voltage Rise Time
f
c
Fall Time
Cross-over Time
V
DD
RG=4.7Ω, VGS=10V
(Inductive Load see, Figure 5)
12
9.5
22
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD=12A,VGS=0
I
SD
VR=50V,Tj= 150°C
(see test circuit, Figure 5)
= 12 A, di/dt = 100 A/µs
664
6.8
20.5
when VDSincreases from 0 to 80%
oss
12
48
1.6 V
ns
ns
ns
ns
ns
A
A
ns
µC
A
3/14
STP14NK60Z - STP14NK60ZF P - STB14NK60Z - STB 14NK60Z- 1 - STW14NK60Z
Safe Operating Area For TO-220/D2PAK/I2PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220/D2PAK/ I2PAK
Thermal Impedance For TO-220FP
Safe Operating Area For TO-247 Thermal Impedance For TO-247
4/14
STP14NK60Z - STP14NK 60Z FP - STB14NK60Z - STB14N K 60Z-1 - STW14NK60Z
Output Characteristics
Transconductance Static Drain-source On Resistance
Transfer Characteristics
Gate Charge vs Gate-so urce Voltage
Capacitance Variations
5/14
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